Bonded semiconductor devices having processor and nand flash memory and methods for forming the same

ABSTRACT

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is continuation of International Application No.PCT/CN2019/105291, filed on Sep. 11, 2019, entitled “BONDEDSEMICONDUCTOR DEVICES HAVING PROCESSOR AND NAND FLASH MEMORY AND METHODSFOR FORMING THE SAME,” which claims the benefit of priorities toInternational Application No. PCT/CN2019/097442, filed on Jul. 24, 2019,entitled “BONDED UNIFIED SEMICONDUCTOR CHIPS AND FABRICATION ANDOPERATION METHODS THEREOF,” and International Application No.PCT/CN2019/085237, filed on Apr. 30, 2019, entitled “THREE-DIMENSIONALMEMORY DEVICE WITH EMBEDDED DYNAMIC RANDOM-ACCESS MEMORY,” all of whichare incorporated herein by reference in their entireties. Thisapplication is also related to co-pending U.S. application Ser. No.______, Attorney Docketing No.: 10018-01-0070-US, filed on even date,entitled “BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND DYNAMICRANDOM-ACCESS ACCESS MEMORY AND METHODS FOR FORMING THE SAME,” andco-pending U.S. application Ser. No. ______, Attorney Docketing No.:10018-01-0072-US, filed on even date, entitled “UNIFIED SEMICONDUCTORDEVICES HAVING PROCESSOR AND HETEROGENEOUS MEMORIES AND METHODS FORFORMING THE SAME,” both of which are hereby incorporated by reference intheir entireties.

BACKGROUND

Embodiments of the present disclosure relate to semiconductor devicesand fabrication methods thereof.

In modern mobile devices (e.g., smartphones, tablets, etc.), multiplecomplicated system-on-chips (SOCs) are used to enable variousfunctionalities, such as application processor, dynamic random-accessmemory (DRAM), flash memory, various controllers for Bluetooth, Wi-Fi,global positioning system (GPS), frequency modulation (FM) radio,display, etc., and baseband processor, which are formed as discretechips. For example, application processor typically is large in sizeincluding central processing units (CPUs), graphics processing units(GPUs), on-chip memory, accelerating function hardware, and other analogcomponents.

SUMMARY

Embodiments of semiconductor devices and fabrication methods thereof aredisclosed herein.

In one example, a semiconductor device includes a first semiconductorstructure including a processor, an array of static random-access memory(SRAM) cells, and a first bonding layer including a plurality of firstbonding contacts. The semiconductor device also includes a secondsemiconductor structure including an array of NAND memory cells and asecond bonding layer including a plurality of second bonding contacts.The semiconductor device further includes a bonding interface betweenthe first bonding layer and the second bonding layer. The first bondingcontacts are in contact with the second bonding contacts at the bondinginterface.

In another example, a method for forming a semiconductor device isdisclosed. A plurality of first semiconductor structures are formed on afirst wafer. At least one of the first semiconductor structures includesa processor, an array of SRAM cells, and a first bonding layer includinga plurality of first bonding contacts. A plurality of secondsemiconductor structures are formed on a second water. At least one ofthe second semiconductor structures includes an array of NAND memorycells and a second bonding layer including a plurality of second bondingcontacts. The first wafer and the second wafer are bonded in aface-to-face manner, such that the at least one of the firstsemiconductor structures is bonded to the at least one of the secondsemiconductor structures. The first bonding contacts of the firstsemiconductor structure are in contact with the second bonding contactsof the second semiconductor structure at a bonding interface. The bondedfirst and second wafers are diced into a plurality of dies. At least oneof the dies includes the bonded first and second semiconductorstructures.

In still another example, a method for forming a semiconductor device isdisclosed. A plurality of first semiconductor structures are formed ona. first wafer. At least one of the first semiconductor structuresincludes a processor, an array of SRAM cells, and a first bonding layerincluding a plurality of first bonding contacts. The first wafer isdiced into a plurality of first dies, such that at least one of thefirst dies includes the at least one of the first semiconductorstructures. A plurality of second semiconductor structures are formed ona second wafer. At least one of the second semiconductor structuresincludes an array of NAND memory cells and a second bonding layerincluding a plurality of second bonding contacts. The second wafer isdiced into a plurality of second dies, such that at least one of thesecond dies includes the at least one of the second semiconductorstructures. The first die and the second die are bonded in aface-to-face manner, such that the first semiconductor structure isbonded to the second semiconductor structure. The first bonding contactsof the first semiconductor structure are in contact with the secondbonding contacts of the second semiconductor structure at a bondinginterface.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1A illustrates a schematic view of a cross-section of an exemplarysemiconductor device, according to some embodiments.

FIG. 1B illustrates a schematic view of a cross-section of anotherexemplary semiconductor device, according to some embodiments.

FIG. 2A illustrates a schematic plan view of an exemplary semiconductorstructure having a processor and SRAM, according to some embodiments.

FIG. 2B illustrates a schematic plan view of an exemplary semiconductorstructure having NAND memory and peripheral circuits, according to someembodiments.

FIG. 3A illustrates a schematic plan view of an exemplary semiconductorstructure having a processor, SRAM, and peripheral circuits, accordingto some embodiments.

FIG. 3B illustrates a schematic plan view of an exemplary semiconductorstructure having NAND memory, according to some embodiments.

FIG. 4A illustrates a cross-section of an exemplary semiconductordevice, according to some embodiments.

FIG. 4B illustrates a cross-section of another exemplary semiconductordevice, according to some embodiments.

FIG. 5A illustrates a cross-section of still another exemplarysemiconductor device, according to some embodiments.

FIG. 5B illustrates a cross-section of yet another exemplarysemiconductor device, according to some embodiments.

FIGS. 6A and 6B illustrate a fabrication process for forming anexemplary semiconductor structure having a processor, SRAM, andperipheral circuits, according to some embodiments.

FIGS. 7A and 7B illustrate a fabrication process for forming anexemplary semiconductor structure having 3D NAND memory strings,according to some embodiments.

FIGS. 7C and 7D illustrate a fabrication process for forming anexemplary semiconductor structure having 2D NAND memory cells, accordingto some embodiments.

FIGS. 8A and 8B illustrate a fabrication process for forming anexemplary semiconductor device, according to some embodiments.

FIGS. 8C and 8D illustrate a fabrication process for forming anotherexemplary semiconductor device, according to some embodiments.

FIGS. 9A-9C illustrate a fabrication process for bonding and dicing anexemplary semiconductor structure, according to some embodiments.

FIGS. 10A-10C illustrate a fabrication process for dicing and bonding anexemplary semiconductor structure, according to some embodiments.

FIG. 11A illustrates a cross-section of an exemplary semiconductorstructure having NAND memory and peripheral circuits, according to someembodiments.

FIG. 11B illustrates a cross-section of another exemplary semiconductorstructure having NAND memory and peripheral circuits, according to someembodiments.

FIG. 12A illustrates a block diagram of an exemplary semiconductorstructure having NAND memory, according to some embodiments.

FIG. 12B illustrates a block diagram of an exemplary semiconductorstructure having NAND memory and peripheral circuits, according to someembodiments.

FIG. 12C illustrates a block diagram of another exemplary semiconductorstructure having NAND memory and peripheral circuits, according to someembodiments.

FIG. 13 is a flowchart of an exemplary method for forming asemiconductor device, according to some embodiments.

FIG. 14 is a flowchart of another exemplary method for forming asemiconductor device, according to some embodiments.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiments. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “three-dimensional (3D) NAND memory string”refers to a vertically-oriented string of memory cell transistorsconnected in series on a laterally-oriented substrate so that the stringof memory cell transistors extends in the vertical direction withrespect to the substrate. As used herein, the term “vertical/vertically”means nominally perpendicular to the lateral surface of a substrate.

As used herein, a “wafer” is a piece of a semiconductor material forsemiconductor devices to build in and/or on it and that can undergovarious fabrication processes before being separated into dies.

Conventional method for using embedded NAND memory (also known as “NANDflash memory”) products as non-volatile memory/storage, such as embeddedmultimedia card (eMMC), universal flash storage (UFS), and ball gridarray (BGA) solid-state drive (SSD), etc. is that the NAND memory chipsare soldered onto the printed circuit board (PCB). Control lines anddata transfer lines of the corresponding protocols of all memory devicesare derived from the host processor (also known as “microprocessor,”e.g., CPU). The conventional method, however, can introduce cross-talkbetween the control and data transfer lines and cause high loading onthe processor.

On the other hand, as modern processors developed into more advancedgenerations, the cache size is playing an incrementally important rolefor processor performance enhancement. In some cases, cache occupiedhalf or even more chip real estate in microprocessor chip. Also, theresistive-capacitive (RC) delay from the cache to the processor corelogic could become significant to degrade performance. Moreover, a businterface unit is needed to electrically connect the processor toexternal non-volatile memory. The bus interface unit itself, however,occupies additional chip area, and its electrical connection to thenon-volatile memory needs additional region for metal routing andintroduces additional RC delay.

Various embodiments in accordance with the present disclosure provide asemiconductor device with a processor core, cache, and non-volatilememory integrated on a bonded chip to achieve better data storageperformance, such as faster data processing, transfer, and storage withhigher efficiency and higher data storage capability. The semiconductordevice disclosed herein can include a first semiconductor structurehaving a processor core and SRAM (e.g., as cache) and a secondsemiconductor structure having NAND memory (e.g., as non-volatilememory) bonded to the first semiconductor structure with a large numberof short-distanced vertical metal interconnects instead of theperipherally-distributed, long-distanced metal routing, or evenconventional through silicon vias (TSVs). And, bus interface units canbe significantly reduced even or completely removed. In someembodiments, the cache module can be divided into smaller cache regions,distributing randomly according to bonding contact design.

As a result, the optimal instant data and state storage capability canachieve higher signal-to-noise (S/N) ratio, better array efficiency,less die size and lower bit cost, denser arrangements of functionalmodules (e.g. processor core, cache, bus interface, etc.), fastercapability speed and smaller PCB size at the same time. Further, shortermanufacturing cycle time with higher yield can be achieved as well dueto less interactive influence from manufacturing processes of theprocessor wafer and the NAND memory wafer as well as the known goodhybrid bonding yield. The shorter connection distance between theprocessor and NAND memory, such as from millimeter or centimeter-levelto micrometer-level, can improve the processor performance with fasterdata transfer rate, improve processor core logic efficiency with widerbandwidth, and improve system speed.

FIG. 1A illustrates a schematic view of a cross-section of an exemplarysemiconductor device 100, according to some embodiments. Semiconductordevice 100 represents an example of a bonded chip. The components ofsemiconductor device 100 (e.g., processors/SRAM and NAND memory) can beformed separately on different substrates and then jointed to form abonded chip. Semiconductor device 100 can include a first semiconductorstructure 102 including a processor and an array of SRAM cells. In someembodiments, the processor and SRAM cell array in first semiconductorstructure 102. use complementary metal-oxide-semiconductor (CMOS)technology. Both the processor and the SRAM cell array can beimplemented with advanced logic processes (e.g., technology nodes of 90nm, 65 nm, 45 nm, 32 nm, 28 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm, 5 nm,3 nm, etc.) to achieve high speed.

The processor can include a specialized processor including, but notlimited to, CPU, GPU, digital signal processor (DSP), tensor processingunit (TPU), vision processing unit (VPU), neural processing unit (NPU),synergistic processing unit (SPU), physics processing unit (PPU), andimage signal processor (ISP). The processor can also include an SoC thatcombines multiple specialized processors, such as an applicationprocessor, baseband processor, and so on. In some embodiments in whichsemiconductor device 100 is used in mobile devices (e.g., smartphones,tablets, eyeglasses, wrist watches, virtual reality/augmented realityheadsets, laptop computers, etc.), an application processor handlesapplications running in an operating system environment, and a basebandprocessor handles the cellular communications, such as thesecond-generation (2G), the third-generation (3G), the fourth-generation(4G), the fifth-generation (5G), the sixth-generation (6G) cellularcommunications, and so on.

Other processing units (also known as “logic circuits”) besides theprocessor can be formed in first semiconductor structure 102 as well,such as one or more controllers and/or the entirety or part of theperipheral circuits of the NAND memory of a second semiconductorstructure 104. A controller can handle a specific operation in anembedded system. In some embodiments in which semiconductor device 100is used in mobile devices, each controller can handle a specificoperation of the mobile device, for example, communications other thancellular communication (e.g., Bluetooth communication, Wi-Ficommunication, FM radio, etc.), power management, display drive,positioning and navigation, touch screen, camera, etc. Firstsemiconductor structure 102 of semiconductor device 100 thus can furtherinclude a Bluetooth controller, a controller, a FM radio controller, apower controller, a display controller, a GPS controller, a touch screencontroller, a camera controller, to name a few, each of which isconfigured to control operations of the corresponding component in amobile device.

In some embodiments, first semiconductor structure 102 of semiconductordevice 100 further includes the entirety or part the peripheral circuitsof the NAND memory of second semiconductor structure 104. The peripheralcircuit (also known as control and sensing circuits) can include anysuitable digital, analog, and/or mixed-signal circuits used forfacilitating the operations of the NAND memory. For example, theperipheral circuit can include one or more of a page buffer, a decoder(e.g., a row decoder and a column decoder), a sense amplifier, a driver(e.g., a word line driver), a charge pump, a current or voltagereference, or any active or passive components of the circuit (e.g.,transistors, diodes, resistors, or capacitors)

The SRAM is integrated on the same substrate of the logic circuits(e.g., the processor and peripheral circuits), allowing wider bus andhigher operation speed, which is also known as “on-die SRAM.” The memorycontroller of the SRAM can be embedded as part of the peripheralcircuits. In some embodiments, each SRAM cell includes a plurality oftransistors for storing a bit of data as a positive or negativeelectrical charge as well as one or more transistors that control accessto it. In one example, each SRAM cell has six transistors (e.g.,metal-oxide-semiconductor field-effect transistors (MOSFETs)), forexample, four transistors for storing a bit of data and two transistorsfor controlling access to the data. The SRAM cells can locate in thearea that is not occupied by the logic circuits (e.g., the processor andperipheral circuits) and thus, do not need extra space to be formed. Theon-die SRAM can enable high-speed operations of semiconductor device100, used as one or more caches (e.g., instruction cache or data cache)and/or data buffers.

Semiconductor device 100 can also include second semiconductor structure104 including an array of NAND memory cells. That is, secondsemiconductor structure 104 can be a NAND flash memory device in whichmemory cells are provided in the form of an array of 3D NAND memorystrings and/or an array of two-dimensional (2D) NAND memory cells. NANDmemory cells can be organized into pages which are then organized intoblocks in which each NAND memory cell is electrically connected to aseparate line called a bit line (BL). All cells with the same verticalposition in the NAND memory cell can be electrically connected throughthe control gates by a word line (WL). In some embodiments, a planecontains a certain number of blocks that are electrically connectedthrough the same bit line. Second semiconductor structure 104 caninclude one or more planes, and the peripheral circuits that are neededto perform all the read/write/erase operations can be included in firstsemiconductor structure 102 and/or second semiconductor structure 104.

In some embodiments, the array of NAND memory cells are an array of 2DNAND memory cells, each of which includes a floating-gate transistor.The array of 2D NAND memory cells include a plurality of 2D NAND memorystrings, each of which includes a plurality of memory cells (e.g., 32 to128 memory cells) connected in series (resembling a NAND gate) and twoselect transistors, according to some embodiments. Each 2D NAND memorystring is arranged in the same plane on the substrate (in 2D), accordingto some embodiments. In some embodiments, the array of NAND memory cellsare an array of 3D NAND memory strings, each of which extends verticallyabove the substrate (in 3D) through a memory stack. Depending on the 3DNAND technology (e.g., the number of layers/tiers in the memory stack),a 3D NAND memory string typically includes 32 to 256 NAND memory cells,each of which includes a floating-gate transistor or a charge-traptransistor.

As shown in FIG. 1A, semiconductor device 100 further includes a bondinginterface 106 vertically between first semiconductor structure 102 andsecond semiconductor structure 104. As described below in detail, firstand second semiconductor structures 102 and 104 can be fabricatedseparately (and in parallel in some embodiments) such that the thermalbudget of fabricating one of first and second semiconductor structures102 and 104 does not limit the processes of fabricating another one offirst and second semiconductor structures 102 and 104. Moreover, a largenumber of interconnects (e.g., bonding contacts) can be formed throughbonding interface 106 to make direct, short-distance (e.g.,micron-level) electrical connections between first semiconductorstructure 102 and second semiconductor structure 104, as opposed to thelong-distance (e.g., millimeter or centimeter-level) chip-to-chip databus on the circuit board, such as PCB, thereby eliminating chipinterface delay and achieving high-speed I/O throughput with reducedpower consumption. Data transfer between the NAND memory in secondsemiconductor structure 104 and the processor in first semiconductorstructure 102 as well as between the NAND memory in second semiconductorstructure 104 and the SRAM in first semiconductor structure 102 can beperformed through the interconnects (e.g., bonding contacts) acrossbonding interface 106. By vertically integrating first and secondsemiconductor structures 102 and 104, the chip size can be reduced, andthe memory cell density can be increased. Furthermore, as a “unified”chip, by integrating multiple discrete chips (e.g., various processors,controllers, and memories) into a single bonded chip (e.g.,semiconductor device 100), faster speed and smaller PCB size can beachieved as well.

It is understood that the relative positions of stacked first and secondsemiconductor structures 102 and 104 are not limited. FIG. 11Billustrates a schematic view of a cross-section of another exemplarysemiconductor device 101, according to some embodiments. Being differentfrom semiconductor device 100 in FIG. 1A in which second semiconductorstructure 104 including the array of NAND memory cells is above firstsemiconductor structure 102 including the processor and the array ofSRAM cells, in semiconductor device 101 in FIG. 1B, first semiconductorstructure 102 including the processor and the array of SRAM cells isabove second semiconductor structure 104 including the array of NANDmemory cells. Nevertheless, bonding interface 106 is formed verticallybetween first and second semiconductor structures 102 and 104 insemiconductor device 101, and first and second semiconductor structures102. and 104 are jointed vertically through bonding (e.g., hybridbonding) according to some embodiments. Data transfer between the NANDmemory in second semiconductor structure 104 and the processor in firstsemiconductor structure 102 as well as the data transfer between theNAND memory in second semiconductor structure 104 and the SRAM in firstsemiconductor structure 102. can be performed through the interconnects(e.g., bonding contacts) across bonding interface 106.

FIG. 2A illustrates a schematic plan view of an exemplary semiconductorstructure 200 having a processor and SRAM, according to someembodiments. Semiconductor structure 200 may be one example of firstsemiconductor structure 102. Semiconductor structure 200 can include aprocessor 202 on the same substrate as SRAM 204 and fabricated using thesame logic process as SRAM 204. Processor 202 can include one or more ofCPUs, GPUs, DSPs, application processors, baseband processors, to name afew. SRAM 204 can be disposed outside of processor 202. For example,FIG. 2A shows an exemplary layout of SRAM 204 in which the array of SRAMcells are distributed in a plurality of separate regions insemiconductor structure 200, which is outside of processor 202. That is,the cache module formed by SRAM 204 can be divided into smaller cacheregions, distributing outside of processor 202 in semiconductorstructure 200. In one example, the distribution of the cache regions maybe based on the design of the bonding contacts, e.g., occupying theareas without bonding contacts. In another example, the distribution ofthe cache regions may be random. As a result, more internal cache (e.g.,using on-die SRAM) can be arranged surrounding processor 202. withoutoccupying additional chip area.

FIG. 2B illustrates a schematic plan view of an exemplary semiconductorstructure 201 having NAND memory and peripheral circuits, according tosome embodiments. Semiconductor structure 201 may be one example ofsecond semiconductor structure 104. Semiconductor structure 201 caninclude NAND memory 206 on the same substrate as the peripheral circuitsof NAND memory 206. Semiconductor structure 201 can include all theperipheral circuits for controlling and sensing NAND memory 206,including, for example, word line drivers 208, page buffers 210, and anyother suitable devices. FIG. 2B shows an exemplary layout of theperipheral circuit (e.g., word line drivers 208, page buffers 210) andNAND memory 206 in which the peripheral circuit (e.g., word line drivers208, page buffers 210) and NAND memory 206 are formed in differentregions on the same plane. For example, the peripheral circuit may beformed outside NAND memory 206.

It is understood that the layouts of semiconductor structures 200 and201 are not limited to the exemplary layouts in FIGS. 2A and 2B. In someembodiments, part of the peripheral circuits of NAND memory 206 (e.g.,one or more of word line drivers 208, page buffers 210, and any othersuitable devices) may be in semiconductor structure 201 having processor202 and SRAM 204. That is, the peripheral circuits of NAND memory 206may be distributed on both semiconductor structures 200 and 201,according to some other embodiments. In some embodiments, at least someof the peripheral circuits (e.g., word line drivers 208, page buffers210) and NAND memory 206 (e.g., the array of NAND memory cells) arestacked one over another, i.e., in different planes. For example, NANDmemory 206 (e.g., the array of NAND memory cells) may be formed above orbelow the peripheral circuits to further reduce the chip size.Similarly, in some embodiments, at least part of SRAM 204 (e.g., thearray of SRAM cells) and processor 202 are stacked one over another,i.e., in different planes. For example, SRAM 204 (e.g., the array ofSRAM cells) may be formed above or below processor 202 to further reducethe chip size.

FIG. 3A illustrates a schematic plan view of an exemplary semiconductorstructure 300 having a processor, SRAM, and peripheral circuits,according to some embodiments. Semiconductor structure 300 may be oneexample of first semiconductor structure 102. Semiconductor structure300 can include processor 202 on the same substrate as SRAM 204 and theperipheral circuits (e.g., word line drivers 208, page buffers 210) andfabricated using the same logic process as SRAM 204 and the peripheralcircuits. Processor 202 can include one or more of CPUs, GPUs, DSPs,application processors, baseband processors, to name a few. Both SRAM204 and the peripheral circuits (e.g., word line drivers 208, pagebuffers 210) can be disposed outside of processor 202. For example, FIG.3A shows an exemplary layout of SRAM 204 in which the array of SRAMcells are distributed in a plurality of separate regions insemiconductor structure 300, which is outside of processor 202.Semiconductor structure 300 can include all the peripheral circuits forcontrolling and sensing NAND memory 206, including, for example, wordline drivers 208, page buffers 210, and any other suitable devices. FIG.3A shows an exemplary layout of the peripheral circuits (e.g., word linedrivers 208, page buffers 210) in which the peripheral circuits (e.g.,word line drivers 208, page buffers 210) and SRAM 204 are formed indifferent regions on the same plane outside of processor 202. It isunderstood that in some embodiments, at least some of the peripheralcircuits (e.g., word line drivers 208, page buffers 210), SRAM 204(e.g., the array of SRAM cells), and processor 202 are stacked one overanother, i.e., in different planes. For example, SRAM 204 (e.g., thearray of SRAM cells) may be formed above or below the peripheralcircuits to further reduce the chip size.

FIG. 3B illustrates a schematic plan view of an exemplary semiconductorstructure 301 having NAND memory, according to some embodiments.Semiconductor structure 301 may be one example of second semiconductorstructure 104. By moving all the peripheral circuits (e.g., word linedrivers 208, page buffers 210) away from semiconductor structure 301(e.g., to semiconductor structure 300), the size of NAND memory 206(e.g., the number of NAND memory cells) in semiconductor structure 301can be increased.

FIG. 4A illustrates a cross-section of an exemplary semiconductor device400, according to some embodiments. As one example of semiconductordevice 100 described above with respect to FIG. 1A, semiconductor device400 is a bonded chip including a first semiconductor structure 402 and asecond semiconductor structure 404 stacked over first semiconductorstructure 402. First and second semiconductor structures 402 and 404 arejointed at a bonding interface 406 therebetween, according to someembodiments. As shown in FIG. 4A, first semiconductor structure 402 caninclude a substrate 408, which can include silicon (e.g., singlecrystalline silicon, c-Si), silicon germanium (SiGe), gallium arsenide(GaAs), germanium (Ge), silicon on insulator (SOI), or any othersuitable materials.

First semiconductor structure 402 of semiconductor device 400 caninclude a device layer 410 above substrate 408. It is noted that x- andy-axes are added in FIG. 4A to further illustrate the spatialrelationship of the components in semiconductor device 400. Substrate408 includes two lateral surfaces (e.g., a top surface and a bottomsurface) extending laterally in the x-direction (the lateral directionor width direction). As used herein, whether one component (e.g., alayer or a device) is “on,” “above,” or “below” another component (e.g.,a layer or a device) of a semiconductor device (e.g., semiconductordevice 400) is determined relative to the substrate of the semiconductordevice (e.g., substrate 408) in they-direction (the vertical directionor thickness direction) when the substrate is positioned in the lowestplane of the semiconductor device in the y-direction. The same notionfor describing the spatial relationship is applied throughout thepresent disclosure.

In some embodiments, device layer 410 includes a processor 412 onsubstrate 408 and an array of SRAM cells 414 on substrate 408 andoutside of processor 412. In some embodiments, device layer 410 furtherincludes a peripheral circuit 416 on substrate 408 and outside ofprocessor 412. For example, peripheral circuit 416 may be part or theentirety of the peripheral circuits for controlling and sensing the NANDmemory of semiconductor device 400 as described below in detail. In someembodiments, processor 412 includes a plurality of transistors 418forming any suitable specialized processors and/or SoCs as describedabove in detail. In some embodiments, transistors 418 also form array ofSRAM cells 414 used as, for example, cache and/or data buffer ofsemiconductor device 400. For example, array of SRAM cells 414 mayfunction as the internal instruction cache and/or data cache ofprocessor 412. Array of SRAM cells 414 can be distributed in a pluralityof separate regions in first semiconductor structure 402. In someembodiments, transistors 418 further form peripheral circuit 416, i.e.,any suitable digital, analog, and/or mixed-signal control and sensingcircuits used for facilitating the operation of the NAND memoryincluding, but not limited to, a page buffer, a decoder (e.g., a rowdecoder and a column decoder), a sense amplifier, a driver (e.g., a wordline driver), a charge pump, a current or voltage reference, or anyactive or passive components of the circuit (e.g., transistors, diodes,resistors, or capacitors).

Transistors 418 can be formed “on” substrate 408, in which the entiretyor part of transistors 418 are formed in substrate 408 (e.g., below thetop surface of substrate 408) and/or directly on substrate 408.Isolation regions (e.g., shallow trench isolations (STIs)) and dopedregions (e.g., source regions and drain regions of transistors 418) canbe formed in substrate 408 as well. Transistors 418 are high-speed withadvanced logic processes (e.g., technology nodes of 90 nm, 65 nm, 45 nm,32 nm, 28 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm, 5 nm, 3 nm, etc),according to some embodiments.

In some embodiments, first semiconductor structure 402 of semiconductordevice 400 further includes an interconnect layer 420 above device layer410 to transfer electrical signals to and from processor 412 and arrayof SRAM cells 414 (and peripheral circuit 416 if any). Interconnectlayer 420 can include a plurality of interconnects (also referred toherein as “contacts”), including lateral interconnect lines and verticalinterconnect access (via) contacts. As used herein, the term“interconnects” can broadly include any suitable types of interconnects,such as middle-end-of-line (MEOL) interconnects and back-end-of-line(BEOL) interconnects. Interconnect layer 420 can further include one ormore interlayer dielectric (ILD) layers (also known as “intermetaldielectric (IMD) layers”) in which the interconnect lines and viacontacts can form. That is, interconnect layer 420 can includeinterconnect lines and via contacts in multiple ILD layers. Theinterconnect lines and via contacts in interconnect layer 420 caninclude conductive materials including, but not limited to, tungsten(W), cobalt (Co), copper (Cu), aluminum (Al), silicides, or anycombination thereof. The ILD layers in interconnect layer 420 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low dielectric constant(low-k) dielectrics, or any combination thereof. In some embodiments,the devices in device layer 410 are electrically connected to oneanother through the interconnects in interconnect layer 420. Forexample, array of SRAM cells 414 may be electrically connected toprocessor 412 through interconnect layer 420.

As shown in FIG. 4A, first semiconductor structure 402 of semiconductordevice 400 can further include a bonding layer 422 at bonding interface406 and above interconnect layer 420 and device layer 410 (includingprocessor 412 and array of SRAM cells 414). Bonding layer 422 caninclude a plurality of bonding contacts 424 and dielectrics electricallyisolating bonding contacts 424. Bonding contacts 424 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The remaining area of bondinglayer 422 can be formed with dielectrics including, but not limited to,silicon oxide, silicon nitride, silicon oxynitride, low-k dielectrics,or any combination thereof. Bonding contacts 424 and surroundingdielectrics in bonding layer 422 can be used for hybrid bonding.

Similarly, as shown in FIG. 4A, second semiconductor structure 404 ofsemiconductor device 400 can also include a bonding layer 426 at bondinginterface 406 and above bonding layer 422 of first semiconductorstructure 402. Bonding layer 426 can include a plurality of bondingcontacts 428 and dielectrics electrically isolating bonding contacts428. Bonding contacts 428 can include conductive materials including,but not limited to, W, Co, Cu, Al, silicides, or any combinationthereof. The remaining area of bonding layer 426 can be formed withdielectrics including, but not limited to, silicon oxide, siliconnitride, silicon oxynitride, low-k dielectrics, or any combinationthereof. Bonding contacts 428 and surrounding dielectrics in bondinglayer 426 can be used for hybrid bonding. Bonding contacts 42.8 are incontact with bonding contacts 424 at bonding interface 406, according tosome embodiments.

As described above, second semiconductor structure 404 can be bonded ontop of first semiconductor structure 402 in a face-to-face manner atbonding interface 406. In some embodiments, bonding interface 406 isdisposed between bonding layers 422 and 426 as a result of hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal bonding and dielectric-dielectric bondingsimultaneously. In some embodiments, bonding interface 406 is the placeat which bonding layers 422 and 426 are met and bonded. In practice,bonding interface 406 can be a layer with a certain thickness thatincludes the top surface of bonding layer 422 of first semiconductorstructure 402 and the bottom surface of bonding layer 426 of secondsemiconductor structure 404.

In some embodiments, second semiconductor structure 404 of semiconductordevice 400 further includes an interconnect layer 430 above bondinglayer 426 to transfer electrical signals. Interconnect layer 430 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some embodiments, the interconnects ininterconnect layer 430 also include local interconnects, such as bitline contacts and word line contacts. Interconnect layer 430 can furtherinclude one or more ILD layers in which the interconnect lines and viacontacts can form. The interconnect lines and via contacts ininterconnect layer 430 can include conductive materials including, butnot limited to W, Co, Cu, Al, silicides, or any combination thereof. ILDlayers in interconnect layer 430 can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof.

In some embodiments, second semiconductor structure 404 of semiconductordevice 400 includes a NAND flash memory device in which memory cells areprovided in the form of an array of 3D NAND memory strings 438 aboveinterconnect layer 430 and bonding layer 426. Each 3D NAND memory string438 extends vertically through a plurality of pairs each including aconductor layer 434 and a dielectric layer 436, according to someembodiments. The stacked and interleaved conductor layers 434 anddielectric layer 436 are also referred to herein as a memory stack 432.Interleaved conductor layers 434 and dielectric layers 436 in memorystack 432 alternate in the vertical direction, according to someembodiments. In other words, except the ones at the top or bottom ofmemory stack 432, each conductor layer 434 can be adjoined by twodielectric layers 436 on both sides, and each dielectric layer 436 canbe adjoined by two conductor layers 434 on both sides. Conductor layers434 can each have the same thickness or different thicknesses.Similarly, dielectric layers 436 can each have the same thickness ordifferent thicknesses. Conductor layers 434 can include conductormaterials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. Dielectric layers 436 can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, or any combination thereof.

In some embodiments, each 3D NAND memory string 438 is a “charge trap”type of NAND memory string including a semiconductor channel 442 and amemory film 440. In some embodiments, semiconductor channel 442 includessilicon, such as amorphous silicon, polysilicon, or single crystallinesilicon. In some embodiments, memory film 440 is a composite dielectriclayer including a tunneling layer, a storage layer (also known as“charge trap/storage layer”), and a blocking layer. Each 3D NAND memorystring 438 can have a cylinder shape (e.g., a pillar shape).Semiconductor channel 442, the tunneling layer, the storage layer, andthe blocking layer of memory film 440 are arranged along a directionfrom the center toward the outer surface of the pillar in this order,according to some embodiments. The tunneling layer can include siliconoxide, silicon oxynitride, or any combination thereof. The storage layercan include silicon nitride, silicon oxynitride, silicon, or anycombination thereof. The blocking layer can include silicon oxide,silicon oxynitride, high dielectric constant (high-k) dielectrics, orany combination thereof. In one example, the blocking layer can includea composite layer of silicon oxide/silicon oxynitride/silicon oxide(ONO). In another example, the blocking layer can include a high-kdielectric layer, such as aluminum oxide (Al₂O₃), hafnium oxide (HfO₂)or tantalum oxide (Ta₂O₅) layer, and so on.

In some embodiments, 3D NAND memory strings 438 further include aplurality of control gates (each being part of a word line). Eachconductor layer 434 in memory stack 432 can act as a control gate foreach memory cell of 3D NAND memory string 438. In some embodiments, each3D NAND memory string 438 includes two plugs 444 and 446 at a respectiveend in the vertical direction. Plug 444 can include a semiconductormaterial, such as single-crystal silicon, that is epitaxially grown froma semiconductor layer 448. Plug 444 can function as the channelcontrolled by a source select gate of 3D NAND memory string 438. Plug444 can be at the upper end of 3D NAND memory string 438 and in contactwith semiconductor channel 442. As used herein, the “upper end” of acomponent (e.g., 3D NAND memory string 438) is the end farther away fromsubstrate 408 in the v-direction, and the “lower end” of the component(e.g., 3D NAND memory string 438) is the end closer to substrate 408 inthe y-direction when substrate 408 is positioned in the lowest plane ofsemiconductor device 400. Another Plug 446 can include semiconductormaterials (e.g., polysilicon). By covering the upper end of 3D NANDmemory string 438 during the fabrication of second semiconductorstructure 404, plug 446 can function as an etch stop layer to preventetching of dielectrics filled in 3D NAND memory string 438, such assilicon oxide and silicon nitride. In some embodiments, plug 446functions as the drain of 3D NAND memory string 438.

In some embodiments, second semiconductor structure 404 further includessemiconductor layer 448 disposed above memory stack 432 and 3D NANDmemory strings 438. Semiconductor layer 448 can be a thinned substrateon which memory stack 432. and 3D NAND memory strings 438 are formed. Insome embodiments, semiconductor layer 448 includes single-crystalsilicon from which plugs 444 can be epitaxially grown. In someembodiments, semiconductor layer 448 can include polysilicon, amorphoussilicon, SiGe, GaAs, Ge, Salicide, or any other suitable materials.Semiconductor layer 448 can also include isolation regions and dopedregions (e.g., functioning as an array common source (ACS) for 3D NANDmemory strings 438, not shown). Isolation regions (not shown) can extendacross the entire thickness or part of the thickness of semiconductorlayer 448 to electrically isolate the doped regions. In someembodiments, a pad oxide layer including silicon oxide is disposedbetween memory stack 432 and semiconductor layer 448.

It is understood that 3D NAND memory strings 438 are not limited to the“charge trap” type of 3D NAND memory strings and may be “floating gate”type of 3D NAND memory strings in other embodiments. Semiconductor layer448 may include polysilicon as the source plate of the “floating gate”type of 3D NAND memory strings.

As shown in FIG. 4A, second semiconductor structure 404 of semiconductordevice 400 can further include a pad-out interconnect layer 450 abovesemiconductor layer 448. Pad-out interconnect layer 450 can includeinterconnects, e.g., contact pads 452, in one or more ILD layers.Pad-out interconnect layer 450 and interconnect layer 430 can be formedat opposite sides of semiconductor layer 448. In some embodiments, theinterconnects in pad-out interconnect layer 450 can transfer electricalsignals between semiconductor device 400 and outside circuits, e.g., forpad-out purposes.

In some embodiments, second semiconductor structure 404 further includesone or more contacts 454 extending through semiconductor layer 448 toelectrically connect pad-out interconnect layer 450 and interconnectlayers 430 and 420. As a result, processor 412 and array of 3D NANDmemory strings 438 (and peripheral circuit 416 if any) can beelectrically connected to array of 3D NAND memory strings 438 throughinterconnect layers 430 and 420 as well as bonding contacts 428 and 424.Moreover, processor 412, array of SRAM cells 414, and array of 3D NANDmemory strings 438 can be electrically connected to outside circuitsthrough contacts 454 and pad-out interconnect layer 450.

FIG. 4B illustrates a cross-section of another exemplary semiconductordevice 401, according to some embodiments. As one example ofsemiconductor device 101 described above with respect to FIG. 1B,semiconductor device 401 is a bonded chip including a secondsemiconductor structure 403 and a first semiconductor structure 405stacked over second semiconductor structure 403. Similar tosemiconductor device 400 described above in FIG. 4A, semiconductordevice 401 represents an example of a bonded chip in which firstsemiconductor structure 405 including a processor and SRAM and secondsemiconductor structure 403 including NAND memory are formed separatelyand bonded in a face-to-face manner at a bonding interface 407.Different from semiconductor device 400 described above in FIG. 4A inwhich first semiconductor structure 402 including the processor and SRAMis below second semiconductor structure 404 including the NAND memory,semiconductor device 401 in FIG. 4B includes first semiconductorstructure 405 including the processor and SRAM disposed above secondsemiconductor structure 403 including the NAND memory. It is understoodthat the details of similar structures (e.g., materials, fabricationprocess, functions, etc.) in both semiconductor devices 400 and 401 maynot be repeated below.

Second semiconductor structure 403 of semiconductor device 401 caninclude a substrate 409 and a memory stack 411 including interleavedconductor layers 413 and dielectric layers 415 above substrate 409. Insome embodiments, an array of 3D NAND memory strings 417 each extendsvertically through interleaved conductor layers 413 and dielectriclayers 415 in memory stack 411 above substrate 409. Each 3D NAND memorystring 417 can include a semiconductor channel 421 and a memory film419. Each 3D NAND memory string 417 further includes two plugs 423 and425 at its lower end and upper end, respectively. 3D NAND memory strings417 can be “charge trap” type of 3D NAND memory strings or “floatinggate” type of 3D NAND memory strings. In some embodiments, a pad oxidelayer including silicon oxide is disposed between memory stack 411 andsubstrate 409.

In some embodiments, second semiconductor structure 403 of semiconductordevice 401 also includes an interconnect layer 427 above memory stack411 and 3D NAND memory strings 417 to transfer electrical signals to andfrom 3D NAND memory strings 417. Interconnect layer 427 can include aplurality of interconnects, including interconnect lines and viacontacts. In some embodiments, the interconnects in interconnect layer427 also include local interconnects, such as bit line contacts and wordline contacts. In some embodiments, second semiconductor structure 403of semiconductor device 401 further includes a bonding layer 429 atbonding interface 407 and above interconnect layer 42.7 and memory stack411 and 3D NAND memory strings 417. Bonding layer 429 can include aplurality of bonding contacts 455 and dielectrics surrounding andelectrically isolating bonding contacts 455.

As shown in FIG. 4B, first semiconductor structure 405 of semiconductordevice 401 includes another bonding layer 451 at bonding interface 407and above bonding layer 429. Bonding layer 451 can include a pluralityof bonding contacts 453 and dielectrics surrounding and electricallyisolating bonding contacts 453. Bonding contacts 453 are in contact withbonding contacts 455 at bonding interface 407, according to someembodiments. In some embodiments, first semiconductor structure 405 ofsemiconductor device 401 also includes an interconnect layer 457 abovebonding layer 451 to transfer electrical signals. Interconnect layer 457can include a plurality of interconnects, including interconnect linesand via contacts.

First semiconductor structure 405 of semiconductor device 401 canfurther include a device layer 431 above interconnect layer 457 andbonding layer 451. In some embodiments, device layer 431 includes aprocessor 435 above interconnect layer 457 and bonding layer 451, and anarray of SRAM cells 437 above interconnect layer 457 and bonding layer451 and outside of processor 435. In some embodiments, device layer 431further includes a peripheral circuit 439 above interconnect layer 457and bonding layer 451 and outside of processor 435. For example,peripheral circuit 439 may be part or the entirety of the peripheralcircuits for controlling and sensing array of 3D NAND memory strings417. In some embodiments, the devices in device layer 431 areelectrically connected to one another through the interconnects ininterconnect layer 457. For example, array of SRAM cells 437 may beelectrically connected to processor 435 through interconnect layer 457.

In some embodiments, processor 435 includes a plurality of transistors441 forming any suitable specialized processors and/or SoCs. Transistors441 can be formed “on” a semiconductor layer 433, in which the entiretyor part of transistors 441 are formed in semiconductor layer 433 and/ordirectly on semiconductor layer 433. Isolation regions (e.g., STIs) anddoped regions (e.g., source regions and drain regions of transistors441) can be formed in semiconductor layer 433 as well. Transistors 441can form array of SRAM cells 437 (and peripheral circuit 439 if any).Transistors 441 are high-speed with advanced logic processes (e.g.,technology nodes of 90 nm, 65 nm, 45 nm, 32 nm, 28 nm, 20 nm, 16 nm, 14nm, 10 nm, 7 nm, 5 nm, 3 nm, etc.), according to some embodiments.

In some embodiments, first semiconductor structure 405 further includessemiconductor layer 433 disposed above device layer 431. Semiconductorlayer 433 can be above and in contact with processor 435 and array ofSRAM cells 437. Semiconductor layer 433 can be a thinned substrate onwhich transistors 441 are formed. In some embodiments, semiconductorlayer 433 includes single-crystal silicon. In some embodiments,semiconductor layer 433 can include polysilicon, amorphous silicon,SiGe, GaAs, Ge, or any other suitable materials. Semiconductor layer 433can also include isolation regions and doped regions.

As shown in FIG. 4B, first semiconductor structure 405 of semiconductordevice 401 can further include a pad-out interconnect layer 443 abovesemiconductor layer 433. Pad-out interconnect layer 443 can includeinterconnects, contact pads 445, in one or more ILD layers. In someembodiments, the interconnects in pad-out interconnect layer 443 cantransfer electrical signals between semiconductor device 401 and outsidecircuits, e.g., for pad-out purposes. In some embodiments, firstsemiconductor structure 405 further includes one or more contacts 447extending through semiconductor layer 433 to electrically connectpad-out interconnect layer 443 and interconnect layers 457 and 427. As aresult, processor 435 and array of SRAM cells 437 (and peripheralcircuit 439 if any) can also be electrically connected to array of 3DNAND memory strings 417 through interconnect layers 457 and 427 as wellas bonding contacts 453 and 455. Moreover, processor 435, array of SRAMcells 437, and array of 3D NAND memory strings 417 can be electricallyconnected to outside circuits through contacts 447 and pad-outinterconnect layer 443.

FIG. 5A illustrates a cross-section of still another exemplarysemiconductor device 500, according to some embodiments. Similar tosemiconductor device 400 described above in FIG. 4A, semiconductordevice 500 represents an example of a bonded chip including firstsemiconductor structure 502 having a processor 512, an array of SRAMcells 514, and a peripheral circuit 516. Different from semiconductordevice 400 described above in FIG. 4A that includes second semiconductorstructure 404 having 3D NAND memory strings 438, semiconductor device500 in FIG. 5A includes a second semiconductor structure 504 having 2DNAND memory cells 536. Similar to semiconductor device 400 describedabove in FIG. 4A, first and second semiconductor structures 502 and 504of semiconductor device 500 are bonded in a face-to-face manner at abonding interface 506, as shown in FIG. 5A. It is understood thatdetails of similar structures (e.g., materials, fabrication process,functions, etc.) in both semiconductor devices 400 and 500 may not berepeated below.

First semiconductor structure 502 of semiconductor device 500 caninclude a device layer 510 above a substrate 508. In some embodiments,device layer 510 includes processor 512 on substrate 508, and array ofSRAM cells 514 on substrate 508 and outside of processor 512. In someembodiments, device layer 510 further includes peripheral circuit 516 onsubstrate 508 and outside of processor 512. For example, peripheralcircuit 516 may be part or the entirety of the peripheral circuits forcontrolling and sensing the NAND memory of semiconductor device 500. Insome embodiments, processor 512 includes a plurality of transistors 518forming any suitable specialized processors and/or SoCs as describedabove in detail. In some embodiments, transistors 518 also form array ofSRAM cells 514 used as, for example, cache and/or data buffer ofsemiconductor device 500. In some embodiments, transistors 518 furtherform peripheral circuit 516, i.e., any suitable digital, analog, and/ormixed-signal control and sensing circuits used for facilitating theoperation of the NAND memory.

In some embodiments, first semiconductor structure 502 of semiconductordevice 500 also includes an interconnect layer 520 above device layer510 to transfer electrical signals to and from processor 512. and arrayof SRAM cells 514 (and peripheral circuit 516 if any). Interconnectlayer 520 can include a plurality of interconnects, includinginterconnect lines and via contacts. In some embodiments, firstsemiconductor structure 502 of semiconductor device 500 further includesa bonding layer 522 at bonding interface 506 and above interconnectlayer 520 and device layer 510 (including processor 512 and array ofSRAM cells 514). Bonding layer 522 can include a plurality of bondingcontacts 524 and dielectrics surrounding and electrically isolatingbonding contacts 524.

Similarly, as shown in FIG. 5A, second semiconductor structure 504 ofsemiconductor device 500 can also include a bonding layer 526 at bondinginterface 506 and above bonding layer 522 of first semiconductorstructure 502. Bonding layer 526 can include a plurality of bondingcontacts 528 and dielectrics electrically isolating bonding contacts528. Bonding contacts 528 are in contact with bonding contacts 524 atbonding interface 506, according to some embodiments. In someembodiments, second semiconductor structure 504 of semiconductor device500 also includes an interconnect layer 530 above bonding layer 526 totransfer electrical signals. Interconnect layer 530 can include aplurality of interconnects, including interconnect lines and viacontacts.

In some embodiments, second semiconductor structure 504 of semiconductordevice 500 includes a NAND flash memory device in which memory cells areprovided in the form of an array of 2D NAND memory cells 536 aboveinterconnect layer 530 and bonding layer 526. Array of 2D NAND memorycells 536 can include a plurality of 2D NAND memory strings, each ofwhich includes a plurality of memory cells 536 connected in series bysources/drains 538 (resembling a NAND gate) and two select transistors540 at the ends of the 2D NAND memory string, respectively. In someembodiments, each 2D NAND memory string further includes one or moreselect gates and/or dummy gates besides select transistors 540. In someembodiments, each 2D NAND memory cell 536 includes a floating-gatetransistor having a floating gate 542 and a control gate 544 stackedvertically. Floating gate 542 can include semiconductor materials, suchas polysilicon. Control gate 544 can be part of the word line of theNAND flash memory device and include conductive materials including, butnot limited to, W, Co, Cu, Al, doped polysilicon, silicides, or anycombination thereof. In some embodiments, the floating-gate transistorfurther includes dielectric layers, such as a blocking layer disposedvertically between control gate 544 and floating gate 542 and atunneling layer disposed above floating gate 542. The blocking layer caninclude silicon oxide, silicon oxynitride, high-k dielectrics, or anycombination thereof. The tunneling layer can include silicon oxide,silicon oxynitride, or a combination thereof. Channels can be formedlaterally between sources/drains 538 and above the gate stacks(including the tunneling layer, floating gate 542, the blocking layer,and control gate 544). Each channel is controlled by the voltage signalapplied to the respective gate stack through control gate 544, accordingto some embodiments. It is understood that 2D NAND memory cell 536 mayinclude a charge-trap transistor, which replaces floating gate 542 witha charge-trap layer (storage layer) as described above in detail. Insome embodiments, the storage layer includes silicon nitride, siliconoxynitride, or any combination thereof and has a thickness smaller thanthat of floating gate 542.

In some embodiments, second semiconductor structure 504 further includessemiconductor layer 546 disposed above and in contact with array of 2DNAND memory cells 536. Semiconductor layer 546 can be a thinnedsubstrate on which 2D NAND memory cells 536 are formed. In someembodiments, semiconductor layer 546 includes single-crystal silicon. Insome embodiments, semiconductor layer 546 includes polysilicon,amorphous silicon, SiGe, GaAs, Ge, or any other suitable materials.Semiconductor layer 546 can also include isolation regions and dopedregions functioning as sources/drains 538 of 2D NAND memory cells 536).

As shown in FIG. 5A, second semiconductor structure 504 of semiconductordevice 500 can further include a pad-out interconnect layer 550 abovesemiconductor layer 546. Pad-out interconnect layer 550 includesinterconnects, e.g., contact pads 552, in one or more ILD layers. In.some embodiments, the interconnects in pad-out interconnect layer 550can transfer electrical signals between semiconductor device 500 andoutside circuits, e.g., for pad-out purposes. In some embodiments,second semiconductor structure 504 further includes one or more contacts554 extending through semiconductor layer 546 to electrically connectpad-out interconnect layer 550 and interconnect layers 530 and 520. As aresult, processor 512 and array of SRAM cells 514 can be electricallyconnected to array of 2D NAND memory cells 536 through interconnectlayers 530 and 520 as well as bonding contacts 528 and 524. Moreover,processor 512, array of SRAM cells 514, and array of 2D NAND memorycells 536 can be electrically connected to outside circuits throughcontacts 554 and pad-out interconnect layer 550.

FIG. 5B illustrates a cross-section of yet another exemplarysemiconductor device 501, according to some embodiments. As one exampleof semiconductor device 101 described above with respect to FIG. 1B,semiconductor device 501 is a bonded chip including a secondsemiconductor structure 503 and a first semiconductor structure 505stacked over second semiconductor structure 503. Similar tosemiconductor device 500 described above in FIG. 5A, semiconductordevice 501 represents an example of a bonded chip in which firstsemiconductor structure 505 including a processor and SRAM and secondsemiconductor structure 503 including an array of 2D NAND memory cellsare formed separately and bonded in a face-to-face manner at a bondinginterface 507. Different from semiconductor device 500 described abovein FIG. 5A in which first semiconductor structure 502 including theprocessor and SRAM is below second semiconductor structure 504 includingthe array of 2D NAND memory cells, semiconductor device 501 in FIG. 5Bincludes first semiconductor structure 505 including the processor andSRAM disposed above second semiconductor structure 503 including thearray of 2D NAND memory cells. It is understood that the details ofsimilar structures (e.g., materials, fabrication process, functions,etc.) in both semiconductor devices 500 and 501 may not be repeatedbelow.

In some embodiments, second semiconductor structure 503 of semiconductordevice 501 includes a NAND flash memory device in which memory cells areprovided in the form of an array of 2D NAND memory cells 551 on asubstrate 509. Array of 2D NAND memory cells 551 can include a pluralityof 2D NAND memory strings, each of which includes a plurality of memorycells connected in series by sources/drains 549 (resembling a NAND gate)and two select transistors 553 at the ends of the 2D NAND memory string,respectively. In some embodiments, each 2D NAND memory cell 551 includesa floating-gate transistor having a floating gate 511 and a control gate513 stacked vertically. In some embodiments, the floating-gatetransistor further includes dielectric layers, such as a blocking layerdisposed vertically between control gate 513 and floating gate 511 and atunneling layer disposed below floating gate 511. Channels can be formedlaterally between sources/drains 549 and below the gate stacks(including the tunneling layer, floating gate 511, the blocking layer,and control gate 513). Each channel is controlled by the voltage signalapplied to the respective gate stack through control gate 513, accordingto some embodiments. It is understood that 2D NAND memory cell 551 mayinclude a charge-trap transistor, which replaces floating gate 511 witha storage layer.

In some embodiments, second semiconductor structure 503 of semiconductordevice 501 also includes an interconnect layer 519 above array of 2DNAND memory cells 551 to transfer electrical signals to and from arrayof 2D NAND memory cells 551. Interconnect layer 519 can include aplurality of interconnects, including interconnect lines and viacontacts. In some embodiments, the interconnects in interconnect layer519 also include local interconnects, such as bit line contacts and wordline contacts. In some embodiments, second semiconductor structure 503of semiconductor device 501 further includes a bonding layer 515 atbonding interface 507 and above interconnect layer 519 and array of 2DNAND memory cells 551. Bonding layer 515 can include a plurality ofbonding contacts 517 and dielectrics surrounding and electricallyisolating bonding contacts 517.

As shown in FIG. 5B, first semiconductor structure 505 of semiconductordevice 501 includes another bonding layer 551 at bonding interface 507and above bonding layer 515. Bonding layer 551 can include a pluralityof bonding contacts 527 and dielectrics surrounding and electricallyisolating bonding contacts 527. Bonding contacts 527 are in contact withbonding contacts 517 at bonding interface 507, according to someembodiments. In some embodiments, first semiconductor structure 505 ofsemiconductor device 501 also includes an interconnect layer 529 abovebonding layer 551 to transfer electrical signals. Interconnect layer 529can include a plurality of interconnects, including interconnect linesand via contacts.

First semiconductor structure 505 of semiconductor device 501 canfurther include a device layer 531 above interconnect layer 529 andbonding layer 551. In some embodiments, device layer 531 includes aprocessor 535 above interconnect layer 529 and bonding layer 551, and anarray of SRAM cells 537 above interconnect layer 529 and bonding layer551 and outside of processor 535. In some embodiments, device layer 531further includes a peripheral circuit 539 above interconnect layer 529and bonding layer 551 and outside of processor 535. For example,peripheral circuit 539 may be part or the entirety of the peripheralcircuits for controlling and sensing array of 2D NAND memory cells 551.In some embodiments, the devices in device layer 531 are electricallyconnected to one another through the interconnects in interconnect layer529. For example, array of SRAM cells 537 may be electrically connectedto processor 535 through interconnect layer 529.

In some embodiments, processor 535 includes a plurality of transistors541 forming any suitable specialized processors and/or SoCs. Transistors541 can be formed “on” a semiconductor layer 533, in which the entiretyor part of transistors 541 are formed in semiconductor layer 533 and/ordirectly on semiconductor layer 533. Isolation regions (e.g., STIs) anddoped regions (e.g., source regions and drain regions of transistors541) can be formed in semiconductor layer 533 as well. Transistors 541can also form array of SRAM cells 537 (and peripheral circuit 539 ifany). Transistors 541 are high-speed with advanced logic processes(e.g., technology nodes of 90 nm, 65 nm, 45 nm, 32 nm, 28 nm, 20 nm, 16nm, 14 nm, 10 nm, 7 nm, 5 nm, 3 nm, etc.), according to someembodiments.

In some embodiments, first semiconductor structure 505 further includessemiconductor layer 533 disposed above device layer 531. Semiconductorlayer 533 can be above and in contact with processor 535 and array ofSRAM cells 537. Semiconductor layer 533 can be a thinned substrate onwhich transistors 541 are formed. In some embodiments, semiconductorlayer 533 includes single-crystal silicon. In some embodiments,semiconductor layer 533 can include polysilicon, amorphous silicon,SiGe, GaAs, Ge, or any other suitable materials. Semiconductor layer 533can also include isolation regions and doped regions.

As shown in FIG. 5B, first semiconductor structure 505 of semiconductordevice 501 can further include a pad-out interconnect layer 543 abovesemiconductor layer 533. Pad-out interconnect layer 543 includesinterconnects, e.g., contact pads 545, in one or more ILD layers. Insome embodiments, the interconnects in pad-out interconnect layer 543can transfer electrical signals between semiconductor device 501 andoutside circuits, e.g., for pad-out purposes. In some embodiments, firstsemiconductor structure 505 further includes one or more contacts 547extending through semiconductor layer 533 to electrically connectpad-out interconnect layer 543 and interconnect layers 529 and 519. As aresult, processor 535 and array of SRAM cells 537 (and peripheralcircuit 539 if any) can be electrically connected to array of 2D NANDmemory cells 551 through interconnect layers 529 and 519 as well asbonding contacts 527 and 517. Moreover, processor 535, array of SRAMcells 537, and array of 2D NAND memory cells 551 can be electricallyconnected to outside circuits through contacts 547 and pad-outinterconnect layer 543.

FIGS. 6A and 6B illustrate a fabrication process for forming anexemplary semiconductor structure having a processor, SRAM, andperipheral circuits, according to some embodiments. FIGS. 7A and 7Billustrate a fabrication process for forming an exemplary semiconductorstructure having 3D NAND memory strings, according to some embodiments.FIGS. 7C and 7D illustrate a fabrication process for forming anexemplary semiconductor structure having 2D NAND memory cells, accordingto some embodiments. FIGS. 8A and 8B illustrate a fabrication processfor forming an exemplary semiconductor device, according to someembodiments. FIGS. 8C and 8D illustrate a fabrication process forforming another exemplary semiconductor device, according to someembodiments. FIGS. 9A-9C illustrate a fabrication process for bondingand dicing an exemplary semiconductor structure, according to someembodiments. FIGS. 10A-10C illustrate a fabrication process for dicingand bonding an exemplary semiconductor structure, according to someembodiments. FIG. 13 is a flowchart of an exemplary method 1300 forforming a semiconductor device, according to some embodiments. FIG. 14is a flowchart of another exemplary method 1400 for forming asemiconductor device, according to some embodiments. Examples of thesemiconductor device depicted in FIGS. 6A, 6B, 7A-7D, 8A, 8B, 9A-9C,10A-10C, 13, and 14 include semiconductor devices 400, 401, 500, and 501depicted in FIGS. 4A, 4B, 5A, and 5B, respectively. FIGS. 6A, 6B, 7A 7D,8A, 8B, 9A-9C, 10A-10C, 13, and 14 will be described together. It isunderstood that the operations shown in methods 1300 and 1400 are notexhaustive and that other operations can be performed as well before,after, or between any of the illustrated operations. Further, some ofthe operations may be performed simultaneously, or in a different orderthan shown in FIGS. 13 and 14.

As depicted in FIGS. 6A and 6B, a first semiconductor structureincluding a processor, an array of SRAM cells, a peripheral circuit, anda first bonding layer including a plurality of first bonding contacts isformed. As depicted in FIGS. 7A and 7B, a second semiconductor structureincluding an array of 3D NAND memory strings and a second bonding layerincluding a plurality of second bonding contacts is formed. As depictedin FIGS. 8A and 8B, the first semiconductor structure and the secondsemiconductor structure are bonded in a face-to-face manner, such thatthe first bonding contacts are in contact with the second bondingcontacts at a bonding interface.

Referring to FIG. 13, method 1300 starts at operation 1302, in which aplurality of first semiconductor structures are formed on a first wafer.At least one of the first semiconductor structures includes a processor,an array of SRAM cells, and a first bonding layer including a pluralityof first bonding contacts. The first wafer can be a silicon wafer. Insome embodiments, to form the plurality of first semiconductorstructures, the processor and the array of SRAM cells are formed on thefirst wafer, a first interconnect layer is formed above the processorand the array of SRAM cells, and the first bonding layer is formed abovethe first interconnect layer. In some embodiments, to form the processorand the array of SRAM cells, a plurality of transistors are formed onthe first wafer. In some embodiments, to form the plurality of firstsemiconductor structures, a peripheral circuit of an array of NANDmemory cells is also formed on the first water.

As illustrated in FIG. 9A, a plurality of first semiconductor structures906 are formed on a first wafer 902. First wafer 902 can include aplurality of shots separated by scribing lines. Each shot of first wafer902 includes one or more first semiconductor structures 906, accordingto some embodiments. FIGS. 6A and 6B illustrate one example of theformation of first semiconductor structure 906.

As illustrated in FIG. 6A, a plurality of transistors 604 are formed ona silicon substrate 602 (as part of first wafer 902, e.g., a siliconwater). Transistors 604 can be formed by a plurality of processesincluding, but not limited to, photolithography, dry/wet etch, thin filmdeposition, thermal growth, implantation, chemical mechanical polishing(CMP), and any other suitable processes. In some embodiments, dopedregions are formed in silicon substrate 602 by ion implantation and/orthermal diffusion, which function, for example, as source regions and/ordrain regions of transistors 604. In some embodiments, isolation regions(e.g., STIs) are also formed in silicon substrate 602 by wet/dry etchand thin film deposition. Transistors 604 can form a device layer 606 onsilicon substrate 602. In some embodiments, device layer 606 includes aprocessor 608, an array of SRAM cells 610, and a peripheral circuit 612.

Method 1300 proceeds to operation 1304, as illustrated in FIG. 13, inwhich a first interconnect layer is formed above the processor and thearray of SRAM cells. The first interconnect layer can include a firstplurality of interconnects in one or more ILD layers. As illustrated inFIG. 6B, an interconnect layer 614 can be formed above device layer 606including processor 608 and array of SRAM cells 610. Interconnect layer614 can include interconnects of MEOL and/or BEOL in a plurality of ILDlayers to make electrical connections with device layer 606. In someembodiments, interconnect layer 614 includes multiple ILD layers andinterconnects therein formed in multiple processes. For example, theinterconnects in interconnect layers 614 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 6B can be collectively referred to as interconnect layer 614.

Method 1300 proceeds to operation 1306, as illustrated in FIG. 13, inwhich a first bonding layer is formed above the first interconnectlayer. The first bonding layer can include a plurality of first bondingcontacts. As illustrated in FIG. 6B, a bonding layer 616 is formed aboveinterconnect layer 614. Bonding layer 616 can include a plurality ofbonding contacts 618 surrounded by dielectrics. In some embodiments, adielectric layer is deposited on the top surface of interconnect layer614 by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. Bonding contacts618 then can be formed through the dielectric layer and in contact withthe interconnects in interconnect layer 614 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., copper). In some embodiments, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 1300 proceeds to operation 1308, as illustrated in FIG. 13, inwhich a plurality of second semiconductor structures are formed on asecond wafer. At least one of the second semiconductor structuresincludes an array of NAND memory cells and a second bonding layerincluding a plurality of second bonding contacts. The second wafer canbe a silicon wafer. As illustrated in FIG. 9A, a plurality of secondsemiconductor structures 908 are formed on a second wafer 904. Secondwafer 904 can include a plurality of shots separated by scribing lines.Each shot of second wafer 904 includes one or more second semiconductorstructures 908, according to some embodiments. FIGS. 7A and 7Billustrate one example of the formation of second semiconductorstructure 908. FIGS. 7C and 7D illustrate another example of theformation of second semiconductor structure 908.

In some embodiments, to form the plurality of second semiconductorstructures, a memory stack is formed above the second wafer, and anarray of 3D NAND memory strings extending vertically through the memorystack are formed. As illustrated in FIG. 7A, interleaved sacrificiallayers (not shown) and dielectric layers 708 are formed above a siliconsubstrate 702. The interleaved sacrificial layers and dielectric layers708 can form a dielectric stack (not shown). In some embodiments, eachsacrificial layer includes a layer of silicon nitride, and eachdielectric layer 708 includes a layer of silicon oxide. The interleavedsacrificial layers and dielectric layers 708 can be formed by one ormore thin film deposition processes including, but not limited to, CVD,PVD, ALD, or any combination thereof. In some embodiments, a memorystack 704 can be formed by a gate replacement process, e.g., replacingthe sacrificial layers with conductor layers 706 using wet/dry etch ofthe sacrificial layers selective to dielectric layers 708 and fillingthe resulting recesses with conductor layers 706. As a result, memorystack 704 can include interleaved conductor layers 706 and dielectriclayers 708. In some embodiments, each conductor layer 706 includes ametal layer, such as a layer of tungsten. It is understood that memorystack 704 may be formed by alternatingly depositing conductor layers(e.g., doped polysilicon layers) and dielectric layers (e.g., siliconoxide layers) without the gate replacement process in other embodiments.In some embodiments, a pad oxide layer including silicon oxide is formedbetween memory stack 704 and silicon substrate 702.

As illustrated in FIG. 7A, 3D NAND memory strings 710 are formed abovesilicon substrate 702, each of which extends vertically throughinterleaved conductor layers 706 and dielectric layers 708 of memorystack 704. In some embodiments, fabrication processes to form 3D NANDmemory string 710 include forming a channel hole through memory stack704 and into silicon substrate 702 using dry etching/and or wet etching,such as deep reactive-ion etching (DRIE), followed by epitaxiallygrowing a plug 712 in the lower portion of the channel hole from siliconsubstrate 702. In some embodiments, fabrication processes to form 3DNAND memory string 710 also include subsequently filling the channelhole with a plurality of layers, such as a memory film 714 (e.g., atunneling layer, a storage layer, and a blocking layer) and asemiconductor layer 716, using thin film deposition processes such asALD, CVD, PVD, or any combination thereof. In some embodiments,fabrication processes to form 3D NAND memory string 710 further includeforming another plug 718 in the upper portion of the channel hole byetching a recess at the upper end of 3D NAND memory string 710, followedby filling the recess with a semiconductor material using thin filmdeposition processes such as ALD, CND, PVD, or any combination thereof.

In some embodiments, to form the plurality of second semiconductorstructures, an array of 2D NAND memory cells are formed on the secondwafer. As illustrated in FIG. 7C, 2D NAND memory cells 703 are formed onsilicon substrate 702 in the form of 2D NAND memory strings, each ofwhich includes a plurality of memory cells connected in series bysources/drains 705 (resembling a NAND gate) and two select transistors707 at the ends of the 2D NAND memory string, respectively. Memory cells703 and select transistors 707 can be formed by a plurality of processesincluding, but not limited to, photolithography, dry/wet etch, thin filmdeposition, thermal growth, implantation, CMP, and any other suitableprocesses. In some embodiments, doped regions are formed in siliconsubstrate 702 by ion implantation and/or thermal diffusion, whichfunction, for example, as sources/drains 705. In some embodiments,isolation regions (e.g., STIs, not shown) are also formed in siliconsubstrate 702 by wet/dry etch and thin film deposition.

In some embodiments, a gate stack is formed for each 2D NAND memory cell703. The gate stack can include a tunneling layer, a floating gate 709,a blocking layer, and a control gate 711 from bottom to top in thisorder for “floating gate” type of 2D NAND memory cells 703. In someembodiments, floating gate 709 is replaced by a storage layer for“charge trap” type of 2D NAND memory cells. The tunneling layer,floating gate 709 (or storage layer), blocking layer, and control gate711 of the gate stack can be formed by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof.

Method 1300 proceeds to operation 1310, as illustrated in FIG. 13, inwhich a second interconnect layer is formed above the array of NANDmemory cells. The second interconnect layer can include a secondplurality of interconnects in one or more ILD layers.

In some embodiments, the second interconnect layer is formed above thememory stack and the array of 3D NAND memory strings. As illustrated inFIG. 7B, an interconnect layer 720 can be formed above memory stack 704and array of 3D NAND memory strings 710. Interconnect layer 720 caninclude interconnects of MEOL, and/or BEOL in a plurality of ILD layersto make electrical connections with array of 3D NAND memory strings 710.In some embodiments, interconnect layer 720 includes multiple ILD layersand interconnects therein formed in multiple processes. For example, theinterconnects in interconnect layers 720 can include conductivematerials deposited by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 7B can be collectively referred to as interconnect layer 720.

In some embodiments, the second interconnect layer is formed above thearray of 2D NAND memory cells. As illustrated in FIG. 7D, aninterconnect layer 713 can be formed above array of 2D NAND memory cells703. Interconnect layer 713 can include interconnects of MEOL and/orBEOL in a plurality of ILD layers to make electrical connections witharray of 2D NAND memory cells 703. In some embodiments, interconnectlayer 713 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 713 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 7D can be collectively referred to as interconnectlayer 713.

Method 1300 proceeds to operation 1312, as illustrated in FIG. 13, inwhich a second bonding layer is formed above the second interconnectlayer. The second bonding layer can include a plurality of secondbonding contacts. As illustrated in FIG. 7B, a bonding layer 722 isformed above interconnect layer 720. Bonding layer 722 can include aplurality of bonding contacts 724 surrounded by dielectrics. In someembodiments, a dielectric layer is deposited on the top surface ofinterconnect layer 720 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. Bonding contacts 724 then can be formed through the dielectriclayer and in contact with the interconnects in interconnect layer 720 byfirst patterning contact holes through the dielectric layer usingpatterning process (e.g., photolithography and dry/wet etch ofdielectric materials in the dielectric layer). The contact holes can befilled with a conductor (e.g., copper). In some embodiments, filling thecontact holes includes depositing an adhesion (glue) layer, a barrierlayer, and/or a seed layer before depositing the conductor.

Similarly, as illustrated in FIG. 7D, a bonding layer 715 is formedabove interconnect layer 713. Bonding layer 715 can include a pluralityof bonding contacts 717 surrounded by dielectrics. In some embodiments,a dielectric layer is deposited on the top surface of interconnect layer713 by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. Bonding contacts717 then can be formed through the dielectric layer and in contact withthe interconnects in interconnect layer 713 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., copper). In some embodiments, filling the contact holes includesdepositing an adhesion (glue) layer, a barrier layer, and/or a seedlayer before depositing the conductor.

Method 1300 proceeds to operation 1314, as illustrated in FIG. 13, inwhich the first wafer and the second wafer are bonded in a face-to-facemanner, such that the at least one of the first semiconductor structuresis bonded to the at least one of the second semiconductor structures.The first bonding contacts of the first semiconductor structure are incontact with the second bonding contacts of the second semiconductorstructure at a bonding interface. The bonding can be hybrid bonding. Insome embodiments, the second semiconductor structure is above the firstsemiconductor structure after the bonding. In some embodiments, thefirst semiconductor structure is above the second semiconductorstructure after the bonding.

As illustrated in FIG. 9B, first wafer 902 and second wafer 904 arebonded in a face-to-face manner, such that at least one of firstsemiconductor structures 906 is bonded to at least one of secondsemiconductor structures 908 at a bonding interface 909. Although firstwafer 902 is above second water 904 after the bonding as shown in FIG.9B, it is understood that second wafer 904 may be above first wafer 902after the bonding in some embodiments. FIG. 8A illustrates one exampleof the formation of bonded first and second semiconductor structures 906and 908. FIG. 8C illustrates another example of the formation of bondedfirst and second semiconductor structures 906 and 908.

As illustrated in FIG. 8A,silicon substrate 702 and components formedthereon (e.g., memory stack 704 and array of 3D NAND memory strings 710formed therethrough) are flipped upside down. Bonding layer 722 facingdown is bonded with bonding layer 616 facing up, i.e., in a face-to-facemanner, thereby forming a bonding interface 802 (as shown in FIG. 8B).In some embodiments, a treatment process, e.g., a plasma treatment, awet treatment, and/or a thermal treatment, is applied to the bondingsurfaces prior to the bonding. Although not shown in FIG. 8A, siliconsubstrate 602 and components formed thereon (e.g., device layer 606including processor 608, array of SRAM cells 610, and peripheral circuit612) can be flipped upside down, and bonding layer 616 facing down canbe bonded with bonding layer 722 facing up, i.e., in a face-to-facemanner, thereby forming bonding interface 802. After the bonding,bonding contacts 724 in bonding layer 722 and bonding contacts 618 inbonding layer 616 are aligned and in contact with one another, such thatmemory stack 704 and array of 3D NAND memory strings 710 formedtherethrough can be electrically connected to device layer 606 (e.g.,processor 608, array of SRAM cells 610, and peripheral circuit 612therein). It is understood that in the bonded chip, device layer 606(e.g., processor 608, array of SRAM cells 610, and peripheral circuit612 therein) may be either above or below memory stack 704 and array of3D NAND memory strings 710 formed therethrough. Nevertheless, bondinginterface 802 can be formed between device layer 606 (e.g., processor608, array of SRAM cells 610, and peripheral circuit 612 therein) andmemory stack 704 (and array of 3D NAND memory strings 710 formedtherethrough) after the bonding as illustrated in FIG. 8B.

Similarly, as illustrated in FIG. 8C, silicon substrate 702 andcomponents formed thereon (e.g., array of 2D NAND memory cells 703) areflipped upside down. Bonding layer 715 facing down is bonded withbonding layer 616 facing up, i.e., in a face-to-face manner, therebyforming a bonding interface 803 (as shown in FIG. 8D). In someembodiments, one or more treatment processes, e.g., plasma treatment,wet treatment, and/or thermal treatment, are applied to the bondingsurfaces prior to the bonding. Although not shown in FIG. 8C, siliconsubstrate 602 and components formed thereon (e device layer 606including processor 608, array of SRAM cells 610, and peripheral circuit612) can be flipped upside down, and bonding layer 616 facing down canbe bonded with bonding layer 715 facing up, i.e., in a face-to-facemanner, thereby forming bonding interface 803. After the bonding,bonding contacts 717 in bonding layer 715 and bonding contacts 618 inbonding layer 616 are aligned and in contact with one another, such thatarray of 2D NAND memory cells 703 can be electrically connected todevice layer 606 (e.g., processor 608, array of SRAM cells 610, andperipheral circuit 612. therein). It is understood that in the bondedchip, device layer 606 (e.g., processor 608, array of SRAM cells 610,and peripheral circuit 612 therein) may be either above or below arrayof 2D NAND memory cells 703. Nevertheless, bonding interface 803 can beformed between device layer 606 (e.g., processor 608, array of SRAMcells 610, and peripheral circuit 612 therein) and array of 2D NANDmemory cells 703 after the bonding as illustrated in FIG. 8C.

Method 1300 proceeds to operation 1316, as illustrated in FIG. 13, inwhich the first wafer or the second wafer is thinned to form asemiconductor layer. In some embodiments, the first wafer of the firstsemiconductor structure, which is above the second wafer of the secondsemiconductor structure after the bonding, is thinned to form thesemiconductor layer. In some embodiments, the second wafer of the secondsemiconductor structure, which is above the first wafer of the firstsemiconductor structure after the bonding, is thinned to form thesemiconductor layer.

As illustrated in FIG. 8B, the substrate at the top of the bonded chip(e.g., silicon substrate 702 as shown in FIG. 8A) is thinned, so thatthe thinned top substrate can serve as a semiconductor layer 804, forexample, a single-crystal silicon layer or a polysilicon layer.Similarly, as illustrated in FIG. 8D, the substrate at the top of thebonded chip (e.g., silicon substrate 702 as shown in FIG. 8C) isthinned, so that the thinned top substrate can serve as a semiconductorlayer 805, for example, a single-crystal silicon layer. The thickness ofthe thinned substrate can be between about 200 nm and about 5 μm, suchas between 200 nm and 5 μm, or between about 150 nm and about 50 μm,such as between 150 nm and 50 μm. Silicon substrate 702 can be thinnedby processes including, but not limited to, wafer grinding, dry etch,wet etch, CMP, any other suitable processes, or any combination thereof.It is understood that when silicon substrate 602 is the substrate at thetop of the bonded chip, another semiconductor layer may be formed bythinning silicon substrate 602.

Method 1300 proceeds to operation 1318, as illustrated in FIG. 13, inwhich a pad-out interconnect layer is formed above the semiconductorlayer. As illustrated in FIG. 8B, a pad-out interconnect layer 806 isformed above semiconductor layer 804 (the thinned top substrate).Pad-out interconnect layer 806 can include interconnects, such as padcontacts 808, formed in one or more ILD layers. Pad contacts 808 caninclude conductive materials including, but not limited to, W, Co, Cu,Al, doped silicon, silicides, or any combination thereof. The ILD layerscan include dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some embodiments, after the bonding andthinning, contacts 810 are formed extending vertically throughsemiconductor layer 804, for example by wet/dry etch followed bydepositing conductive materials. Contacts 810 can be in contact with theinterconnects in pad-out interconnect layer 806.

Similarly, as illustrated in FIG. 8D, a pad-out interconnect layer 807is formed above semiconductor layer 805 (the thinned top substrate).Pad-out interconnect layer 807 can include interconnects, such as padcontacts 809, formed in one or more ILD layers. Pad contacts 809 caninclude conductive materials including, but not limited to, W, Co, Cu,Al, doped silicon, silicides, or any combination thereof. The ILD layerscan include dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some embodiments, after the bonding andthinning, contacts 811 are formed extending vertically throughsemiconductor layer 805, for example by wet/dry etch followed bydepositing conductive materials. Contacts 811 can be in contact with theinterconnects in pad-out interconnect layer 807.

Method 1300 proceeds to operation 1320, as illustrated in FIG. 13, inwhich the bonded first and second wafers are diced into a plurality ofdies. At least one of the dies includes the bonded first and secondsemiconductor structures. As illustrated in FIG. 9C, bonded first andsecond wafers 902 and 904 (as shown in FIG. 9B) are diced into aplurality of dies 912. At least one of dies 912 includes bonded firstand second semiconductor structures 906 and 908. In some embodiments,each shot of bonded first and second wafers 902 and 904 is cut frombonded first and second wafers 902 and 904 along the scribing linesusing wafer laser dicing and/or mechanical dicing techniques, therebybecoming respective die 912. Die 912 can include bonded first and secondsemiconductor structures 906 and 908, for example, the bonded structureas shown in FIG. 8B or 8D.

Instead of packaging scheme based on wafer-level bonding before dicingas described above with respect to FIGS. 9A-9C and 13, FIGS. 10A-10C and14 illustrate another packaging scheme based on die-level bonding afterdicing, according to some embodiments. Operations 1302, 1304, and 1306of method 1300 in FIG. 13 are described above with respect to method1300 in FIG. 13 and thus, are not repeated. As illustrated in FIG. 10A,a plurality of first semiconductor structures 1006 are formed on a firstwafer 1002. First wafer 1002 can include a plurality of shots separatedby scribing lines. Each shot of first wafer 1002 includes one or morefirst semiconductor structures 1006, according to some embodiments.FIGS. 6A and 6B illustrate one example of the formation of firstsemiconductor structure 1006.

Method 1400 proceeds to operation 1402, as illustrated in FIG. 14, inwhich the first wafer is diced into a plurality of first dies, such thatat least one of the first dies includes the at least one of the firstsemiconductor structures. As illustrated in FIG. 10B, first wafer 1002(as shown in FIG. 10A) is diced into a plurality of dies 1010, such thatat least one die 1010 includes first semiconductor structure 1006. Insome embodiments, each shot of first wafer 1002 is cut from first wafer1002 along the scribing lines using wafer laser dicing and/or mechanicaldicing techniques, thereby becoming respective die 1010. Die 1010 caninclude first semiconductor structure 1006, for example, the structureas shown in FIG. 6B.

Operations 1308, 1310, and 1312. of method 1300 in FIG. 13 are describedabove with respect to method 1300 in FIG. 13 and thus, are not repeated.As illustrated in FIG. 10A, a plurality of second semiconductorstructures 1008 are formed on a second wafer 1004. Second wafer 1004 caninclude a plurality of shots separated by scribing lines. Each shot ofsecond wafer 1004 includes one or more second semiconductor structures1008, according to some embodiments. FIGS. 7A and 7B illustrate oneexample of the formation of second semiconductor structure 1008. FIGS.7C and 7D illustrate another example of the formation of secondsemiconductor structure 1008.

Method 1400 proceeds to operation 1404, as illustrated in FIG. 14, inwhich the second wafer is diced into a plurality of second dies, suchthat at least one of the second dies includes the at least one of thesecond semiconductor structures. As illustrated in FIG. 10B, secondwafer 1004 (as shown in FIG. 10A) is diced into a plurality of dies1012, such that at least one die 1012 includes second semiconductorstructure 1008. In some embodiments, each shot of second wafer 1004 iscut from second wafer 1004 along the scribing lines using wafer laserdicing and/or mechanical dicing techniques, thereby becoming respectivedie 1012. Die 1012 can include second semiconductor structure 1008, forexample, the structure as shown in FIG. 7C or 7D.

Method 1400 proceeds to operation 1406, as illustrated in FIG. 14, inwhich the first die and the second die are bonded in a face-to-facemanner, such that the first semiconductor structure is bonded to thesecond semiconductor structure. The first bonding contacts of the firstsemiconductor structure are in contact with the second bonding contactsof the second semiconductor structure at a bonding interface. Asillustrated in FIG. 10C, die 1010 including first semiconductorstructure 1006 and die 1012 including second semiconductor structure1008 are bonded in a face-to-face manner, such that first semiconductorstructure 1006 is bonded to second semiconductor structure 1008 at abonding interface 1014. Although first semiconductor structure 1006 isabove second semiconductor structure 1008 after the bonding as shown inFIG. 10C, it is understood that second semiconductor structure 1008 maybe above first semiconductor structure 1006 after the bonding in someembodiments. FIG. 8A illustrates one example of the formation of bondedfirst and second semiconductor structures 1006 and 1008. FIG. 8Billustrates another example of the formation of bonded first and secondsemiconductor structures 1006 and 1008.

Method 1400 proceeds to operation 1408, as illustrated in FIG. 14, inwhich the first wafer or the second wafer is thinned to form asemiconductor layer. In some embodiments, the first wafer of the firstsemiconductor structure, which is above the second wafer of the secondsemiconductor structure after the bonding, is thinned to form thesemiconductor layer. In some embodiments, the second wafer of the secondsemiconductor structure, which is above the first wafer of the firstsemiconductor structure after the bonding, is thinned to form thesemiconductor layer.

As illustrated in FIG. 8B, the substrate at the top of the bonded chip(e.g., silicon substrate 702 as shown in FIG. 8A) is thinned, so thatthe thinned top substrate can serve as a semiconductor layer 804, forexample, a single-crystal silicon layer or a polysilicon layer.Similarly, as illustrated in FIG. 8D, the substrate at the top of thebonded chip (e.g., silicon substrate 702 as shown in FIG. 8C) isthinned, so that the thinned top substrate can serve as a semiconductorlayer 805, for example, a single-crystal silicon layer. The thickness ofthe thinned substrate can be between about 200 nm and about 5 μm, suchas between 200 nm and 5 μm, or between about 150 nm and about 50 μm,such as between 150 nm and 50 μm. Silicon substrate 702 can be thinnedby processes including, but not limited to, wafer grinding, dry etch,wet etch, CMP, any other suitable processes, or any combination thereof.It is understood that when silicon substrate 602 is the substrate at thetop of the bonded chip, another semiconductor layer may be formed bythinning silicon substrate 602.

Method 1400 proceeds to operation 1410, as illustrated in FIG. 14, inwhich a pad-out interconnect layer is formed above the semiconductorlayer. As illustrated in FIG. 8B, a pad-out interconnect layer 806 isformed above semiconductor layer 804 (the thinned top substrate).Pad-out interconnect layer 806 can include interconnects, such as padcontacts 808, formed in one or more ILD layers. Pad contacts 808 caninclude conductive materials including, but not limited to, W, Co, Cu,Al, doped silicon, silicides, or any combination thereof. The ILD layerscan include dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some embodiments, after the bonding andthinning, contacts 810 are formed extending vertically throughsemiconductor layer 804, for example by wet/dry etch followed bydepositing conductive materials. Contacts 810 can be in contact with theinterconnects in pad-out interconnect layer 806.

Similarly, as illustrated in FIG. 8D, a pad-out interconnect layer 807is formed above semiconductor layer 805 (the thinned top substrate).Pad-out interconnect layer 807 can include interconnects, such as padcontacts 809, formed in one or more ILD layers. Pad contacts 809 caninclude conductive materials including, but not limited to, W, Co, Cu,Al, doped silicon, silicides, or any combination thereof. The ILD layerscan include dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some embodiments, after the bonding andthinning, contacts 811 are formed extending vertically throughsemiconductor layer 805, for example by wet/dry etch followed bydepositing conductive materials. Contacts 811 can be in contact with theinterconnects in pad-out interconnect layer 807.

It is understood that although the first semiconductor structuresdisclosed above in which a processor and SRAM are formed (e.g., 402,405, 502, and 505) each includes the peripheral circuits of the NANDmemory (e.g., 416, 439, 516, and 539), in some embodiments, the entiretyor part of the peripheral circuits may not be included in the firstsemiconductor structure in the bonded semiconductor device. It isfurther understood that although the second semiconductor structuresdisclosed above in which NAND memory is formed (e.g., 403, 404, 503, and504) each does not include the peripheral circuits of the NAND memory,in some embodiments, the entirety or part of the peripheral circuits maybe included in the first semiconductor structure in the bondedsemiconductor device.

FIG. 11A illustrates a cross-section of an exemplary semiconductorstructure 1100 having NAND memory and peripheral circuits, according tosome embodiments. For illustrative purpose only, a NAND memory 1104 insemiconductor structure 1100 includes array of 3D NAND memory strings417 extending vertically through memory stack 411 above a substrate 1102as described above in detail in second semiconductor structure 403 withrespect to FIG. 4B. The details of similar structures (e.g., materials,fabrication process, functions, etc.) in both semiconductor structures403 and 1100 are not repeated. It is understood that NAND memory 1104may include an array of 2D NAND memory cells (e.g., 536 and 551) inother embodiments.

As illustrated in FIG. 11A, semiconductor structure 1100 furtherincludes a peripheral circuit 1106 formed on substrate 1102 and outsideof NAND memory 1104 (e.g., array of 3D NAND memory strings 417). BothNAND memory 1104 and peripheral circuit 1106 of NAND memory 1104 can beformed in the same plane, e.g., on substrate 1102. Peripheral circuit1106 can be the entirety or part of the peripheral circuits for sensingand controlling NAND memory 1104, including one or more of a pagebuffer, a decoder (e.g., a row decoder and a column decoder), a senseamplifier, a driver (e.g., a word line driver), a charge pump, a currentor voltage reference, or any active or passive components of the circuit(e.g., transistors, diodes, resistors, or capacitors). In someembodiments, peripheral circuit 1106 includes a plurality of transistors1108. Transistors 1108 can be formed “on” substrate 1102, in which theentirety or part of transistors 1108 are formed in substrate 1102 (e.g.,below the top surface of substrate 1102) and/or directly on substrate1102. Isolation regions (e.g., STIs) and doped regions (e.g., sourceregions and drain regions of transistors 1108) can be formed insubstrate 1102 as well. Transistors 1108 are high-speed with advancedlogic processes (e.g., technology nodes of 90 nm, 65 nm, 45 nm, 32 nm,28 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm, 5 nm, 3 nm, etc.), according tosome embodiments.

In some embodiments, semiconductor structure 1100 also includes aninterconnect layer 1110 above NAND memory 1104 (e.g., memory stack 411,3D NAND memory strings 417) and peripheral circuit 1106 to transferelectrical signals to and from 3D NAND memory strings 417 and peripheralcircuit 1106. Interconnect layer 1110 can include a plurality ofinterconnects, including interconnect lines and via contacts. NANDmemory 1104 (e.g., 3D NAND memory strings 417) and peripheral circuit1106 can be electrically connected by the interconnects in interconnectlayer 1110 as well. In some embodiments, semiconductor structure 1100further includes a bonding layer 1112 above interconnect layer 1110,memory stack 411 (and 3D NAND memory strings 417 therethrough), andperipheral circuit 1106. Bonding layer 1112 can include a plurality ofbonding contacts 1114 and dielectrics surrounding and electricallyisolating bonding contacts 1114.

The relative positions of the NAND memory and the peripheral circuit ofthe NAND memory in the same semiconductor structure are not limited tobeing in the same plane as shown in FIG. 11A. In some embodiments, theperipheral circuit of the NAND memory is above the NAND memory. In someembodiments, the peripheral circuit of the NAND memory is below the NANDmemory. FIG. 11B illustrates a cross-section of another exemplarysemiconductor structure 1101 having NAND memory and peripheral circuits,according to some embodiments. Semiconductor structure 1101 is similarto semiconductor structure 403, both of which include memory stack 411,array of 3D NAND memory strings 417, interconnect layer 427 above memorystack 411, and bonding layer 429 above interconnect layer 427. Thedetails of similar structures (e.g., materials, fabrication process,functions, etc.) in both semiconductor structures 403 and 1101 are thusnot repeated.

Different from semiconductor structure 403, semiconductor structure 1101further includes a peripheral circuit 1107 below memory stack 411 (and3D NAND memory strings 417 therethrough) on a substrate 1103. Peripheralcircuit 1107 can be the entirety or part of the peripheral circuits forsensing and controlling 3D NAND memory strings 417, including one ormore of a page buffer, a decoder (e.g., a row decoder and a columndecoder), a sense amplifier, a driver (e.g., a word line driver), acharge pump, a current or voltage reference, or any active or passivecomponents of the circuit transistors, diodes, resistors, orcapacitors). In some embodiments, peripheral circuit 1107 includes aplurality of transistors 1109. Transistors 1109 can be formed “on”substrate 1103, in which the entirety or part of transistors 1109 areformed in substrate 1103 (e.g., below the top surface of substrate 1103)and/or directly on substrate 1103. Isolation regions (e.g., STIs) anddoped regions (e.g., source regions and drain regions of transistors1109) can be formed in substrate 1103 as well. Transistors 1109 arehigh-speed with advanced logic processes (e.g., technology nodes of 90nm, 65 nm, 45 nm, 32 nm, 28 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm, 5 nm,3 nm, etc.), according to some embodiments.

In some embodiments, semiconductor structure 1101 also includes aninterconnect layer 1111 formed vertically between peripheral circuit1107 and memory stack 411 (and 3D NAND memory strings 417 therethrough)to electrically connect 3D NAND memory strings 417 and peripheralcircuit 1107 for transferring electrical signals between 3D NAND memorystrings 417 and peripheral circuit 1107. Interconnect layer 1111 caninclude a plurality of interconnects, including interconnect lines andvia contacts. 3D NAND memory strings 417 and peripheral circuit 1107 canbe electrically connected by the interconnects in interconnect layer1111 as well. In some embodiments, semiconductor structure 1101 furtherincludes a semiconductor layer 1105 above which memory stack 411 (and 3DNAND memory strings 417 therethrough) can be formed. Semiconductor layer1105 can be a polysilicon layer formed above interconnect layer 1111,for example, by one or more thin film deposition processes. Memory stack411 then can be formed above semiconductor layer 1105. It is understoodthat although peripheral circuit 1107 is below memory stack 411 (and 3DNAND memory strings 417 therethrough) as shown in FIG. 11B, in someembodiments, peripheral circuit 1107 may be above memory stack 411 (and3D NAND memory strings 417 therethrough).

FIG. 12A illustrates a block diagram of an exemplary semiconductorstructure 1200 having NAND memory, according to some embodiments.Semiconductor structure 1200 includes NAND memory 1202 but does notinclude any peripheral circuit of NAND memory 1202. The peripheralcircuits of NAND memory 1202 can be formed in another semiconductorstructure bonded with semiconductor structure 1200. NAND memory 1202 canexchange data, control, command, and address signals with the peripheralcircuits in another semiconductor structure through word lines (WLs) andbit lines (BLs) using a large number of short-distanced bonding contactsacross the bonding interface as disclosed above in detail. Examples ofsemiconductor structure 1200 include semiconductor structures 403, 404,503, and 504 in FIGS. 4A, 4B, 5A, and 5B.

FIG. 12B illustrates a block diagram of an exemplary semiconductorstructure 1201 having NAND memory and peripheral circuits, according tosome embodiments. FIG. 12C illustrates a block diagram of anotherexemplary semiconductor structure 1203 having NAND memory and peripheralcircuits, according to some embodiments. Semiconductor structures 1201and 1203 each includes NAND memory 1202 and the peripheral circuitsthereof, for example, including page buffers 1204 electrically connectedthrough bit lines, word line drivers 1206 electrically connected throughword lines, and other peripheral circuits 1208 (e.g., sense amplifiers,address decoders, etc. The peripheral circuits of NAND memory 1202 canbe formed in the same semiconductor structure as NAND memory 1202, i.e.,both in semiconductor structure 1201 or 1203. Other peripheral circuits1208 can exchange data, control, and state signals with the processor inanother semiconductor structure using a large number of short-distancedbonding contacts across the bonding interface as disclosed above indetail. Examples of semiconductor structures 1201 and 1203 includesemiconductor structures 1100 and 1101 in FIGS. 11A and 11B.

According to one aspect of the present disclosure, a semiconductordevice includes a first semiconductor structure including a processor,an array of SRAM cells, and a first bonding layer including a pluralityof first bonding contacts. The semiconductor device also includes asecond semiconductor structure including an array of NAND memory cellsand a second bonding layer including a plurality of second bondingcontacts. The semiconductor device further includes a bonding interfacebetween the first bonding layer and the second bonding layer. The firstbonding contacts are in contact with the second bonding contacts at thebonding interface.

In some embodiments, the first semiconductor structure includes asubstrate, the processor on the substrate, the array of SRAM cells onthe substrate and outside of the processor, and the first bonding layerabove the processor and the array of SRAM cells.

In some embodiments, the second semiconductor structure includes thesecond bonding layer above the first bonding layer, a memory stack abovethe second bonding layer, an array of 3D NAND memory strings extendingvertically through the memory stack, and a semiconductor layer above andin contact with the array of 3D NAND memory strings.

In some embodiments, the second semiconductor structure includes thesecond bonding layer above the first bonding layer, an array oftwo-dimensional (2D) NAND memory cells above the second bonding layer,and a semiconductor layer above and in contact with the array of 2D NANDmemory cells.

In some embodiments, the semiconductor device further includes a pad-outinterconnect layer above the semiconductor layer. In some embodiments,the semiconductor layer includes polysilicon. In some embodiments, thesemiconductor layer includes single-crystal silicon.

In some embodiments, the second semiconductor structure includes asubstrate, a memory stack above the substrate, an array of 3D NANDmemory strings extending vertically through the memory stack, and thesecond bonding layer above the array of 3D NAND memory strings.

In some embodiments, the second semiconductor structure includes asubstrate, an array of 2D NAND memory cells on the substrate, and thesecond bonding layer above the array of 2D NAND memory cells.

In some embodiments, the first semiconductor structure includes thefirst bonding layer above the second bonding layer, the processor abovethe first bonding layer, the array of SRAM cells above the first bondinglayer and outside of the one or more processors, and a semiconductorlayer above and in contact with the processor and the array of SRAMcells.

In some embodiments, the semiconductor device further includes a pad-outinterconnect layer above the semiconductor layer. In some embodiments,the semiconductor layer includes single-crystal silicon.

In some embodiments, the first semiconductor structure further includesa peripheral circuit of the array of NAND memory cells. In someembodiments, the second semiconductor structure further includes aperipheral circuit of the array of NAND memory cells.

In some embodiments, the peripheral circuit is above or below the arrayof NAND memory cells. In some embodiments, the peripheral circuit isoutside of the array of NAND memory cells.

In some embodiments, the first semiconductor structure includes a firstinterconnect layer vertically between the first bonding layer and theprocessor, and the second semiconductor structure includes a secondinterconnect layer vertically between the second bonding layer and thearray of NAND memory cells.

In some embodiments, the processor is electrically connected to thearray of NAND memory cells through the first and second interconnectlayers and the first and second bonding contacts.

In some embodiments, the array of SRAM cells are electrically connectedto the array of NAND memory cells through the first and secondinterconnect layers and the first and second bonding contacts.

In some embodiments, the array of SRAM cells are distributed in aplurality of separate regions in the first semiconductor structure.

According to another aspect of the present disclosure, a method forforming a semiconductor device is disclosed. A plurality of firstsemiconductor structures are formed on a first wafer. At least one ofthe first semiconductor structures includes a processor, an array ofSRAM cells, and a first bonding layer including a plurality of firstbonding contacts. A plurality of second semiconductor structures areformed on a second wafer. At least one of the second semiconductorstructures includes an array of NAND memory cells and a second bondinglayer including a plurality of second bonding contacts. The first waferand the second wafer in are bonded in a face-to-face manner, such thatthe at least one of the first semiconductor structures is bonded to theat least one of the second semiconductor structures. The first bondingcontacts of the first semiconductor structure are in contact with thesecond bonding contacts of the second semiconductor structure at abonding interface. The bonded first and second wafers are diced into aplurality of dies. At least one of the dies includes the bonded firstand second semiconductor structures.

In some embodiments, to form the plurality of first semiconductorstructures, the processor and the array of SRAM cells are formed on thefirst wafer, a first interconnect layer is formed above the processorand the array of SRAM cells, and the first bonding layer is formed abovethe first interconnect layer. In some embodiments, to form the processorand the array of SRAM cells, a plurality of transistors are formed onthe first wafer.

In some embodiments, to form the plurality of first semiconductorstructures, a peripheral circuit of the array of NAND memory cells isformed on the first wafer.

In some embodiments, to form the plurality of second semiconductorstructures, a memory stack is formed above the second wafer, an array of3D NAND memory strings extending vertically through the memory stack areformed, a second interconnect layer is formed above the array of NANDmemory strings, and the second bonding layer is formed above the secondinterconnect layer.

In some embodiments, to form the plurality of second semiconductorstructures, an array of 2D NAND memory cells are formed on the secondwafer, a second. interconnect layer is formed above the array of NANDmemory strings, and the second bonding layer is formed above the secondinterconnect layer.

In some embodiments, to form the plurality of second semiconductorstructures, a peripheral circuit of the array of NAND memory cells isformed on the second wafer.

In some embodiments, the peripheral circuit is formed above or below thearray of NAND memory cells. In some embodiments, the peripheral circuitis formed outside of the array of NAND memory cells.

In some embodiments, the second semiconductor structure is above thefirst semiconductor structure after the bonding. In some embodiments,after the bonding and prior to the dicing, the second wafer is thinnedto form a semiconductor layer, and a pad-out interconnect layer isformed above the semiconductor layer.

In some embodiments, the first semiconductor structure is above thesecond semiconductor structure after the bonding. In some embodiments,after the bonding and prior to the dicing, the first wafer is thinned toform a semiconductor layer, and a pad-out interconnect layer is formedabove the semiconductor layer.

In some embodiments, the bonding includes hybrid bonding.

According to still another aspect of the present disclosure, a methodfor forming a semiconductor device is disclosed. A plurality of firstsemiconductor structures are formed on a first wafer. At least one ofthe first semiconductor structures includes a processor, an array ofSRAM cells, and a first bonding layer including a plurality of firstbonding contacts. The first wafer is diced into a plurality of firstdies, such that at least one of the first dies includes the at least oneof the first semiconductor structures. A plurality of secondsemiconductor structures are formed on a second wafer. At least one ofthe second semiconductor structures includes an array of NAND memorycells and a second bonding layer including a plurality of second bondingcontacts. The second wafer is diced into a plurality of second dies,such that at least one of the second dies includes the at least one ofthe second semiconductor structures. The first die and the second dieare bonded in a face-to-face manner, such that the first semiconductorstructure is bonded to the second semiconductor structure. The firstbonding contacts of the first semiconductor structure are in contactwith the second bonding contacts of the second semiconductor structureat a bonding interface.

In some embodiments, to form the plurality of first semiconductorstructures, the processor and the army of SRAM cells are formed on thefirst wafer, a first interconnect layer is formed above the processorand the array of SRAM cells, and the first bonding layer is formed abovethe first interconnect layer. In some embodiments, to form the processorand the array of SRAM cells, a plurality of transistors are formed onthe first wafer.

In some embodiments, to form the plurality of first semiconductorstructures, a peripheral circuit of the array of NAND memory cells isformed on the first wafer.

In some embodiments, to form the plurality of second semiconductorstructures, a memory stack is formed above the second wafer, an array of3D NAND memory strings extending vertically through the memory stack areformed, a second interconnect layer is formed above the array of 3D NANDmemory strings, and the second bonding layer is formed above the secondinterconnect layer.

In some embodiments, to form the plurality of second semiconductorstructures, an array of 2D NAND memory cells are formed on the secondwafer, a second interconnect layer is formed above the array of 2D NANDmemory cells, and the second bonding layer is formed above the secondinterconnect layer.

In some embodiments, to form the plurality of second semiconductorstructures, a peripheral circuit of the array of NAND memory cells isformed on the second wafer.

In some embodiments, the peripheral circuit is formed above or below thearray of NAND memory cells. In some embodiments, the peripheral circuitis formed outside of the array of NAND memory cells.

In some embodiments, the second semiconductor structure is above thefirst semiconductor structure after the bonding. In some embodiments,the second wafer is thinned to form a semiconductor layer prior to thedicing of the second wafer, and a pad-out interconnect layer is formedabove the semiconductor layer.

In some embodiments, the first semiconductor structure is above thesecond semiconductor structure after the bonding. In some embodiments,the first wafer is thinned to form a semiconductor layer prior to thedicing of the first wafer, and a pad-out interconnect layer is formedabove the semiconductor layer.

In some embodiments, the bonding includes hybrid bonding.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A semiconductor device, comprising: a firstsemiconductor structure comprising a processor, an array of staticrandom-access memory (SRAM) cells, and a first bonding layer comprisinga plurality of first bonding contacts; a second semiconductor structurecomprising an array of NAND memory cells and a second bonding layercomprising a plurality of second bonding contacts; and a bondinginterface between the first bonding layer and the second bonding layer,wherein the first bonding contacts are in contact with the secondbonding contacts at the bonding interface.
 2. The semiconductor deviceof claim I, wherein the first semiconductor structure comprises: asubstrate; the processor on the substrate; the array of SRAM cells onthe substrate and outside of the processor; and the first bonding layerabove the processor and the array of SRAM cells.
 3. The semiconductordevice of claim 2, wherein the second semiconductor structure comprises:the second bonding layer above the first bonding layer; a memory stackabove the second bonding layer; an array of three-dimensional (3D) NANDmemory strings extending vertically through the memory stack; and asemiconductor layer above and in contact with the array of 3D NANDmemory strings.
 4. The semiconductor device of claim 2, wherein thesecond semiconductor structure comprises: the second bonding layer abovethe first bonding layer; an array of two-dimensional (2D) NAND memorycells above the second bonding layer; and a semiconductor layer aboveand in contact with the array of 2D NAND memory cells.
 5. Thesemiconductor device of claim 3, further comprising a pad-outinterconnect layer above the semiconductor layer, wherein thesemiconductor layer comprises polysilicon or single-crystal silicon. 6.The semiconductor device of claim 1, wherein the second semiconductorstructure comprises: a substrate; a memory stack above the substrate; anarray of 3D NAND memory strings extending vertically through the memorystack; and the second bonding layer above the memory stack and the arrayof 3D NAND memory strings.
 7. The semiconductor device of claim 1,wherein the second semiconductor structure comprises: a substrate; anarray of 2D NAND memory cells on the substrate; and the second bondinglayer above the array of 2D NAND memory cells.
 8. The semiconductordevice of claim 1, wherein the first semiconductor structure or thesecond semiconductor structure further comprises a peripheral circuit ofthe array of NAND memory cells.
 9. The semiconductor device of claim 1,wherein the first semiconductor structure comprises a first interconnectlayer vertically between the first bonding layer and the processor, andthe second semiconductor structure comprises a second interconnect layervertically between the second bonding layer and the array of NAND memorycells; and the processor and the array of SRAM cells are electricallyconnected to the array of NAND memory cells through the first and secondinterconnect layers and the first and second bonding contacts.
 10. Thesemiconductor device of claim 1, wherein the array of SRAM cells aredistributed in a plurality of separate regions in the firstsemiconductor structure.
 11. A method for forming a semiconductordevice, comprising: forming a plurality of first semiconductorstructures on a first wafer, wherein at least one of the firstsemiconductor structures comprises a processor, an array of staticrandom-access memory (SRAM) cells, and a first bonding layer comprisinga plurality of first bonding contacts; forming a plurality of secondsemiconductor structures on a second wafer, wherein at least one of thesecond semiconductor structures comprises an array of NAND memory cellsand a second bonding layer comprising a plurality of second bondingcontacts; bonding the first wafer and the second wafer in a face-to-facemanner, such that the at least one of the first semiconductor structuresis bonded to the at least one of the second semiconductor structures,wherein the first bonding contacts of the first semiconductor structureare in contact with the second bonding contacts of the secondsemiconductor structure at a bonding interface; and dicing the bondedfirst and second wafers into a plurality of dies, wherein at least oneof the dies comprises the bonded first and second semiconductorstructures.
 12. The method of claim 11, herein forming the plurality offirst semiconductor structures comprises: forming the processor and thearray of SRAM cells on the first wafer; forming a first interconnectlayer above the processor and the array of SRAM cells; and forming thefirst bonding layer above the first interconnect layer.
 13. The methodof claim 11, wherein forming the plurality of second semiconductorstructures comprises: forming a memory stack above the second wafer;forming an array of three-dimensional (3D) NAND memory strings extendingvertically through the memory stack; forming a second interconnect layerabove the array of 3D NAND memory strings; and forming the secondbonding layer above the second interconnect layer.
 14. The method ofclaim 11, wherein forming the plurality of second semiconductorstructures comprises: forming an array of two-dimensional (2D) NANDmemory cells on the second wafer; forming a second interconnect layerabove the array of 2D NAND memory cells; and forming the second bondinglayer above the second interconnect layer.
 15. The method of claim 11,wherein the second semiconductor structure is above the firstsemiconductor structure after the bonding; and The method furthercomprises, after the bonding and prior to the dicing: thinning thesecond wafer to form a semiconductor layer; and forming a pad-outinterconnect layer above the semiconductor layer.
 16. The method ofclaim 11, wherein the first semiconductor structure is above the secondsemiconductor structure after the bonding; and the method furthercomprises, after the bonding and prior to the dicing: thinning the firstwafer to form a semiconductor layer; and forming a pad-out interconnectlayer above the semiconductor layer.
 17. A method for forming asemiconductor device, comprising: forming a plurality of firstsemiconductor structures on a first wafer, wherein at least one of thefirst semiconductor structures comprises a processor, an array of staticrandom-access memory (SRAM) cells, and a first bonding layer comprisinga plurality of first bonding contacts; dicing the first wafer into aplurality of first dies, such that at least one of the first diescomprises the at least one of the first semiconductor structures;forming a plurality of second semiconductor structures on a secondwafer, wherein at least one of the second semiconductor structurescomprises an array of NAND memory cells and a second bonding layercomprising a plurality of second bonding contacts; dicing the secondwafer into a plurality of second dies, such that at least one of thesecond dies comprises the at least one of the second semiconductorstructures; and bonding the first die and the second die in aface-to-face manner, such that the first semiconductor structure isbonded to the second semiconductor structure, wherein the first bondingcontacts of the first semiconductor structure are in contact with thesecond bonding contacts of the second semiconductor structure at abonding interface.
 18. The method of claim 17, wherein forming theplurality of first semiconductor structures comprises: forming theprocessor and the array of SRAM cells on the first wafer; forming afirst interconnect layer above the processor and the array of SRAMcells; and forming the first bonding layer above the first interconnectlayer.
 19. The method of claim 17, wherein forming the plurality ofsecond semiconductor structures comprises: forming a memory stack abovethe second wafer; forming an array of three-dimensional (3D) NAND memorystrings extending vertically through the memory stack; forming a secondinterconnect layer above the array of 3D NAND memory strings; andforming the second bonding layer above the second interconnect layer.20. The method of claim 17, wherein forming the plurality of secondsemiconductor structures comprises: forming an array of two-dimensional(2D) NAND memory cells on the second wafer; forming a secondinterconnect layer above the array of 2D NAND memory cells; and formingthe second bonding layer above the second interconnect layer.